The CY7C199D-10VXI, manufactured by Infineon Technologies, is a high-performance static random-access memory (SRAM) device designed for demanding applications.
This device operates at a voltage of 3.3V and has a speed of 10ns, making it ideal for applications requiring fast data processing.
High-speed operation at 10ns access time
Low power consumption for energy efficiency
Wide operating voltage range of 2.7V to 3.6V
Industrial temperature range of -40°C to 85°C
The CY7C199D-10VXI offers reliable data storage and retrieval capabilities, ensuring seamless operation in critical systems.
Common applications include telecommunications equipment, industrial automation, automotive systems, and consumer electronics.
Refer to the product datasheet and application notes for detailed information on design considerations and implementation guidelines.
The CY7C199D-10VXI stands out as a top-of-the-line semiconductor solution, delivering exceptional performance and reliability for a wide range of applications.
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