IGBT Arrays

Results:
19
Manufacturer
Series
Current - Collector (Ic) (Max)
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Power - Max
Voltage - Collector Emitter Breakdown (Max)
Package / Case
Supplier Device Package
Configuration
Mounting Type
IGBT Type
Operating Temperature
NTC Thermistor
Input
Results remaining19
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureSeriesIGBT TypeConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power - MaxVce(on) (Max) @ Vge, IcCurrent - Collector Cutoff (Max)Input Capacitance (Cies) @ VceInputNTC ThermistorPackage / CaseSupplier Device Package
MMIX4B22N300
IGBT TRANS 3000V 38A
1+
$119.5804
5+
$112.9371
10+
$106.2937
Quantity
2,624 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
BIMOSFET™
-
Full Bridge
3000 V
38 A
150 W
2.7V @ 15V, 22A
35 µA
2.2 nF @ 25 V
Standard
No
24-SMD Module, 9 Leads
24-SMPD
MMIX4B20N300
IGBT F BRIDGE 3000V 34A 24SMPD
1+
$302.0979
5+
$285.3147
10+
$268.5315
Quantity
300 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
BIMOSFET™
-
Full Bridge
3000 V
34 A
150 W
3.2V @ 15V, 20A
-
-
Standard
No
24-SMD Module, 9 Leads
24-SMPD
IXA40PG1200DHG-TRR
IGBT H BRIDGE 1200V 63A SMPD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
PT
Half Bridge
1200 V
63 A
230 W
2.15V @ 15V, 35A
150 µA
-
Standard
No
9-SMD Module
ISOPLUS-SMPD™.B
AOMU66464Q
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FII24N170AH1
IGBT H BRIDGE 1700V 18A I4PAK5
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
-
NPT
Half Bridge
1700 V
18 A
140 W
6V @ 15V, 16A
100 µA
2.4 nF @ 25 V
Standard
No
i4-Pac™-4, Isolated
ISOPLUS i4-PAC™
FII50-12E
IGBT H BRIDGE 1200V 50A I4PAK5
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
-
NPT
Half Bridge
1200 V
50 A
200 W
2.6V @ 15V, 30A
400 µA
2 nF @ 25 V
Standard
No
i4-Pac™-5
ISOPLUS i4-PAC™
FII30-12E
IGBT H BRIDGE 1200V 33A I4PAK5
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
-
NPT
Half Bridge
1200 V
33 A
150 W
2.9V @ 15V, 20A
200 µA
1.2 nF @ 25 V
Standard
No
i4-Pac™-5
ISOPLUS i4-PAC™
FII30-06D
IGBT H BRIDGE 600V 30A I4PAK5
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
-
NPT
Half Bridge
600 V
30 A
100 W
2.4V @ 15V, 20A
600 µA
1.1 nF @ 25 V
Standard
No
i4-Pac™-5
ISOPLUS i4-PAC™
FII24N17AH1S
IGBT H BRIDGE 1700V 18A I4PAK5
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-
-
NPT
Half Bridge
1700 V
18 A
140 W
6V @ 15V, 16A
100 µA
2.4 nF @ 25 V
Standard
No
i4-Pac™-5
ISOPLUS i4-PAC™
FII24N17AH1
IGBT H BRIDGE 1700V 18A I4PAK5
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
-
NPT
Half Bridge
1700 V
18 A
140 W
6V @ 15V, 16A
100 µA
2.4 nF @ 25 V
Standard
No
i4-Pac™-5
ISOPLUS i4-PAC™
FII40-06D
IGBT H BRIDGE 600V 40A I4PAK5
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
-
NPT
Half Bridge
600 V
40 A
125 W
2.2V @ 15V, 25A
600 µA
1.6 nF @ 25 V
Standard
No
i4-Pac™-5
ISOPLUS i4-PAC™
IXA30PG1200DHG-TUB
IGBT H BRIDGE 1200V 43A SMPD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
PT
Half Bridge
1200 V
43 A
150 W
2.2V @ 15V, 25A
2.1 mA
-
Standard
No
9-SMD Module
ISOPLUS-SMPD™.B
IXA40PG1200DHG-TUB
IGBT H BRIDGE 1200V 63A SMPD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
PT
Half Bridge
1200 V
63 A
230 W
2.15V @ 15V, 35A
150 µA
-
Standard
No
9-SMD Module
ISOPLUS-SMPD™.B
IXA40RG1200DHG-TUB
IGBT H BRIDGE 1200V 63A SMPD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
ISOPLUS™
PT
Half Bridge
1200 V
63 A
230 W
2.15V @ 15V, 35A
150 µA
-
Standard
No
9-SMD Module
ISOPLUS-SMPD™.B
IXA30PG1200DHG-TRR
IGBT H BRIDGE 1200V 43A SMPD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
PT
Half Bridge
1200 V
43 A
150 W
2.2V @ 15V, 25A
2.1 mA
-
Standard
No
9-SMD Module
ISOPLUS-SMPD™.B
IXA20PG1200DHG-TUB
IGBT H BRIDGE 1200V 32A SMPD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
PT
Half Bridge
1200 V
32 A
130 W
2.1V @ 15V, 15A
125 µA
-
Standard
No
9-SMD Module
ISOPLUS-SMPD™.B
IXA40RG1200DHG-TRR
IGBT H BRIDGE 1200V 63A SMPD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
ISOPLUS™
PT
Half Bridge
1200 V
63 A
230 W
2.15V @ 15V, 35A
150 µA
-
Standard
No
9-SMD Module
ISOPLUS-SMPD™.B
IXA20PG1200DHG-TRR
IGBT H BRIDGE 1200V 32A SMPD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
PT
Half Bridge
1200 V
32 A
130 W
2.1V @ 15V, 15A
125 µA
-
Standard
No
9-SMD Module
ISOPLUS-SMPD™.B
MMIX4G20N250
IGBT H BRIDGE 2500V 23A 24SMPD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
Full Bridge
2500 V
23 A
100 W
3.1V @ 15V, 20A
10 µA
1.19 nF @ 15 V
Standard
No
24-SMD Module, 9 Leads
24-SMPD

IGBT Arrays

Insulated-Gate Bipolar Transistors (IGBTs) are advanced power semiconductor devices that offer high efficiency and fast switching capabilities. These three-terminal devices are primarily used as electronic switches in a wide range of applications. One of the key advantages of IGBTs is their ability to handle high power levels, making them ideal for use in switching power supplies and high-power applications such as variable-frequency drives (VFDs), electric cars, trains, lamp ballasts, air-conditioners, and industrial control systems. Their ability to handle large currents and voltages enables efficient power conversion and control in these demanding applications. IGBTs are also commonly used in switching amplifiers, which are essential components in sound systems and industrial control systems. The fast switching speed of IGBTs allows for precise control over the amplification process, resulting in high-quality audio output and efficient power utilization. In certain applications, IGBT arrays are employed, which consist of multiple IGBT devices packaged together in either full-bridge or half-bridge configurations. This configuration offers enhanced power handling capabilities and allows for more complex circuit designs. The "insulated-gate" in the name refers to the presence of an insulating layer between the gate electrode and the semiconductor material. This insulation helps to minimize leakage currents and improve the overall performance of the device. Additionally, IGBTs combine the positive attributes of both bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), offering the best features of both technologies. In summary, Insulated-Gate Bipolar Transistors (IGBTs) are high-efficiency and fast-switching power semiconductor devices. They find extensive use in various applications, including switching power supplies, VFDs, electric vehicles, industrial control systems, and sound systems. IGBT arrays provide enhanced power handling capabilities, while the insulated-gate design ensures optimal performance and efficiency.