Central Semiconductor has introduced Gallium Nitride (GaN) N-Channel FETs tailored for soft-switching applications that demand high efficiency standards. These FETs stand out by combining a high voltage capability with low RDS(ON), making them perfect for applications requiring efficient power conversion.
The GaN N-Channel FETs from Central Semiconductor come in various models to cater to different needs. The 100V model supports currents of up to 60A, while the 650V model is available in versions supporting 11A or 17A. Additionally, there is a 40V option that can handle currents of 20A or 50A, providing flexibility for diverse application requirements.
One of the key advantages of these FETs is their space-saving design, which includes DFN and chip scale packaging. This compact form factor makes them particularly suitable for high-power applications such as wireless charging, power factor correction (PFC), and electric vehicle inverters, where efficiency and thermal management are crucial.
Furthermore, Central Semiconductor offers bare dies of these GaN FETs upon demand, allowing for custom integration and specialized applications. This flexibility ensures that customers can optimize their designs for performance and cost-efficiency.
In conclusion, Central Semiconductor's GaN N-Channel FETs are a versatile and efficient solution for soft-switching applications, providing high voltage capability, low RDS(ON), and a range of current options to meet the demands of modern power electronics systems.
High voltage capability
Low gate charge
RDS(ON) as low as 3.2 mΩ
Efficient fast switching
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