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Manufacturer:
NXP USA Inc.Description:
MOSFET N-CH 30V 120A I2PAK
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TYPE | DESCRIPTION |
---|---|
Category | |
Manufacturer | NXP USA Inc. |
Series | TrenchMOS™ |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 175°C (TJ) |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Rds On (Max) @ Id, Vgs | 1.6mOhm @ 25A, 10V |
Power Dissipation (Max) | 349W (Tc) |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Supplier Device Package | I2PAK |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs (Max) | ±20V |
Drain to Source Voltage (Vdss) | 30 V |
Gate Charge (Qg) (Max) @ Vgs | 154 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 11960 pF @ 25 V |
BUK7E1R6-30E,127 - From Manufacturer: NXP USA Inc., it is an MOSFET N-CH 30V 120A I2PAK, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs. BUK7E1R6-30E,127 stock status: need to confirm with us, contact us! Quick Reply.