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Manufacturer:
Goford SemiconductorDescription:
N/P60V,RD(MAX)<35M@10V,RD(MAX)<4
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TYPE | DESCRIPTION |
---|---|
Manufacturer | Goford Semiconductor |
Series | TrenchFET® |
Package / Case | 8-SOP |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Technology | MOSFET (Metal Oxide) |
Power - Max | 2W (Tc), 2.5W (Tc) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 30V, 2610pF @ 30V |
Rds On (Max) @ Id, Vgs | 35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V, 25nC @ 10V |
FET Feature | Standard |
Vgs(th) (Max) @ Id | 2.5V @ 250µA, 3.5V @ 250µA |
Supplier Device Package | 8-SOIC (0.154", 3.90mm Width) |
G06NP06S2 - From Manufacturer: Goford Semiconductor, it is an N/P60V,RD(MAX)<35M@10V,RD(MAX)<4, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, FET, MOSFET Arrays. G06NP06S2 stock status: need to confirm with us, contact us! Quick Reply.