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Manufacturer:
Goford SemiconductorDescription:
P-20V,RD(MAX)<[email protected],RD(MAX
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TYPE | DESCRIPTION |
---|---|
Category | |
Manufacturer | Goford Semiconductor |
Series | TrenchFET® |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Technology | MOSFET (Metal Oxide) |
FET Type | P-Channel |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Rds On (Max) @ Id, Vgs | 18.4mOhm @ 1A, 4.5V |
FET Feature | Standard |
Power Dissipation (Max) | 3.3W (Tc) |
Vgs(th) (Max) @ Id | 1.1V @ 250µA |
Supplier Device Package | 8-SOP |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs (Max) | ±12V |
Drain to Source Voltage (Vdss) | 20 V |
Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 2455 pF @ 10 V |
G11S - From Manufacturer: Goford Semiconductor, it is an P-20V,RD(MAX)<[email protected],RD(MAX, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs. G11S stock status: need to confirm with us, contact us! Quick Reply.