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Manufacturer:
Goford SemiconductorDescription:
MOSFET, N+N-CH,60V,9A,RD(MAX)<13
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Attributes
Technical Documents
| TYPE | DESCRIPTION |
|---|---|
| Manufacturer | Goford Semiconductor |
| Series | TrenchFET® |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 3021pF @ 30V |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| FET Feature | Standard |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOP |
| Power - Max | 2.6W (Tc) |
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G130N06S2 - From Manufacturer: Goford Semiconductor, it is an MOSFET, N+N-CH,60V,9A,RD(MAX)<13, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, FET, MOSFET Arrays. G130N06S2 stock status: need to confirm with us, contact us! Quick Reply.
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