Name: GT095N10S
Brand: Goford Semiconductor
SKU: 15323741-GT095N10S
Availability: InStock

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Technical Documents

TYPE	DESCRIPTION
Series	SGT
Package / Case	8-SOIC (0.154", 3.90mm Width)
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Rds On (Max) @ Id, Vgs	10.5mOhm @ 20A, 10V
FET Feature	Standard
Power Dissipation (Max)	3.1W (Tc)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-SOP
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	29.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2131 pF @ 50 V

Datasheet

GT095N10S Datasheet (PDF)

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GT095N10S - From Manufacturer: Goford Semiconductor, it is an N100V, 21A,RD<9.5M@10V,VTH1.2V~2, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs. GT095N10S stock status: need to confirm with us, contact us! Quick Reply.

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GT095N10S

Manufacturer:
Goford Semiconductor

Description:

N100V, 21A,RD<9.5M@10V,VTH1.2V~2

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