IDC08S120EX1SA3

Manufacturer:

Infineon Technologies

Description:

DIODE SIL CARB 1.2KV 7.5A WAFER

Origin Data #:

5412540-IDC08S120EX1SA3

Customer:


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Attributes

Technical Documents

TYPEDESCRIPTION
Category
ManufacturerInfineon Technologies
SeriesCoolSiC™+
Package / CaseDie
Mounting TypeSurface Mount
Diode TypeSilicon Carbide Schottky
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Capacitance @ Vr, F380pF @ 1V, 1MHz
Current - Average Rectified (Io)7.5A
Supplier Device PackageSawn on foil
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 7.5 A
Current - Reverse Leakage @ Vr180 µA @ 1200 V

Datasheet

Product Overview

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IDC08S120EX1SA3 - From Manufacturer: Infineon Technologies, it is an DIODE SIL CARB 1.2KV 7.5A WAFER, part of Discrete Semiconductor Products, Diodes, Rectifiers, Single Diodes. IDC08S120EX1SA3 stock status: need to confirm with us, contact us! Quick Reply.

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Certifications
ERAIESDAS 9120BISO 9001ISO 13485ISO 14001ISO 22301ISO 28000ISO 37001ISO 37301ISO 45001