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Manufacturer:
Nexperia USA Inc.Description:
MOSFET N/P-CH 20V SOT666
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Attributes
Technical Documents
| TYPE | DESCRIPTION |
|---|---|
| Manufacturer | Nexperia USA Inc. |
| Series | TrenchMOS™ |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 800mA, 550mA |
| Input Capacitance (Ciss) (Max) @ Vds | 83pF @ 10V |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 500mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.68nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | SOT-666 |
| Grade | Automotive |
| Power - Max | 500mW |
| Qualification | AEC-Q101 |
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PMDT290UCE,115 - From Manufacturer: Nexperia USA Inc., it is an MOSFET N/P-CH 20V SOT666, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, FET, MOSFET Arrays. PMDT290UCE,115 stock status: need to confirm with us, contact us! Quick Reply.
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