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Manufacturer:
Vishay SiliconixDescription:
MOSFET 2N-CH 30V 5.7A 8SOIC
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Attributes
Technical Documents
| TYPE | DESCRIPTION |
|---|---|
| Category | |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
Datasheet
SI4804BDY-T1-GE3 Datasheet (PDF)
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SI4804BDY-T1-GE3 - From Manufacturer: Vishay Siliconix, it is an MOSFET 2N-CH 30V 5.7A 8SOIC, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, FET, MOSFET Arrays. SI4804BDY-T1-GE3 stock status: need to confirm with us, contact us! Quick Reply.
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