Manufacturer:
Toshiba Semiconductor and StorageDescription:
PB-F POWER MOSFET TRANSISTOR DOS
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TYPE | DESCRIPTION |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSVIII-H |
Package / Case | 8-PowerWDFN |
Mounting Type | Surface Mount |
Operating Temperature | 150°C |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 150A (Ta) |
Rds On (Max) @ Id, Vgs | 2.5mOhm @ 50A, 10V |
Power Dissipation (Max) | 800mW (Ta), 142W (Tc) |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Supplier Device Package | 8-DSOP Advance |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs (Max) | ±20V |
Drain to Source Voltage (Vdss) | 75 V |
Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 37.5 V |
TPW2R508NH,L1Q - From Manufacturer: Toshiba Semiconductor and Storage, it is an PB-F POWER MOSFET TRANSISTOR DOS, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs. TPW2R508NH,L1Q stock status: need to confirm with us, contact us! Quick Reply.