Harris Corporation

Harris Corporation

Harris Corporation is a global technology company that provides innovative solutions for customers in various industries, including defense, space, and communications. Founded in 1895 and headquartered in Florida, USA, Harris has a long history of delivering cutting-edge products and services that meet the evolving needs of its clients. The company's portfolio includes advanced communication systems, electronic warfare equipment, and intelligence, surveillance, and reconnaissance solutions. Harris' commitment to innovation, reliability, and customer satisfaction has earned it a reputation as a go-to provider of mission-critical technologies. With a global presence and a focus on groundbreaking research and development, Harris continues to push the boundaries of what's possible, enabling its customers to achieve their goals with confidence.

Gate Drivers

Results:
20
Series
Supplier Device Package
Package / Case
Voltage - Supply
Operating Temperature
Current - Peak Output (Source, Sink)
High Side Voltage - Max (Bootstrap)
Driven Configuration
Number of Drivers
Rise / Fall Time (Typ)
Channel Type
Logic Voltage - VIL, VIH
Input Type
Gate Type
Mounting Type
Grade
Output Configuration
Load Type
Current - Peak Output
Technology
Features
Applications
Voltage - Load
Rds On (Typ)
Qualification
Fault Protection
Current - Output / Channel
Interface
Results remaining20
Applied Filters:
Harris Corporation
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ImageProduct DetailPriceAvailabilityECAD ModelSeriesOperating TemperatureMounting TypePackage / CaseSupplier Device PackageVoltage - SupplyInput TypeDriven ConfigurationChannel TypeNumber of DriversGate TypeLogic Voltage - VIL, VIHCurrent - Peak Output (Source, Sink)High Side Voltage - Max (Bootstrap)Rise / Fall Time (Typ)
HIP5500IP
HALF BRIDGE GATE DRIVER
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-40°C ~ 85°C
Through Hole
20-DIP (0.300", 7.62mm)
20-PDIP
10V ~ 15V
Non-Inverting
Half-Bridge
Synchronous
1
N-Channel MOSFET
-
2A, 2A
500 V
25ns, 25ns
HV400IB
HIGH CURRENT MOSFET DRIVER
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
35V
Non-Inverting
High-Side
Single
1
N-Channel MOSFET
3.5V, 0.5V
6A, 30A
-
50ns, 12ns
ICL7667R4616
DUAL POWER MOSFET DRIVER
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Quantity
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PCB Symbol, Footprint & 3D Model
*
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HIP6601CB
RECTIFIED BUCK MOSFET DRIVER
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Quantity
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PCB Symbol, Footprint & 3D Model
-
0°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
5V ~ 12V
Non-Inverting
Half-Bridge
Independent
2
N-Channel MOSFET
-
-
-
20ns, 20ns
HIP2500IP1
HALF BRIDGE 500VDC DRIVER
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-40°C ~ 85°C (TA)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
10V ~ 15V
Non-Inverting
Half-Bridge
Synchronous
2
N-Channel MOSFET
-
2A, 2A
500 V
25ns, 25ns
HIP4081IP
80V/2.5A PEAK, HIGH FREQUENCY FU
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-40°C ~ 85°C (TA)
Through Hole
20-DIP (0.300", 7.62mm)
20-PDIP
9.5V ~ 15V
ICL7667CPA
IC GATE DRVR HALF-BRIDGE 8DIP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
0°C ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
4.5V ~ 15V
Inverting
-
Independent
2
N-Channel MOSFET
0.8V, 2V
-
-
20ns, 20ns
ICL7667CTV
DUAL POWER MOSFET DRIVER
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Quantity
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PCB Symbol, Footprint & 3D Model
-
0°C ~ 70°C (TA)
Through Hole
TO-99-8 Metal Can
TO-99-8
4.5V ~ 15V
Inverting
High-Side or Low-Side
Independent
2
N-Channel MOSFET
0.8V, 2V
-
-
20ns, 20ns
HIP2500IB
HALF BRIDGE 500VDC DRIVER
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
10V ~ 15V
Non-Inverting
Half-Bridge
Synchronous
2
N-Channel MOSFET
-
2A, 2A
500 V
25ns, 25ns
HIP0060AB
1.5AMP, 50V QUAD LOW SIDE POWER
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-40°C ~ 125°C (TA)
Surface Mount
24-SOIC (0.295", 7.50mm Width)
24-SOIC
3.2V ~ 4.4V
Non-Inverting
Low-Side
Independent
4
N-Channel MOSFET
-
-
50 V
-
HIP0084AB
QUAD POWER DRIVERS W/SERIAL DIAG
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-40°C ~ 125°C (TA)
Surface Mount
20-SOIC (0.433", 11.00mm Width) Exposed Pad
20-PSOP
5.5V ~ 35V
Non-Inverting
Low-Side
Synchronous
4
N-Channel MOSFET
-
5A, 2A
-
-
HIP4081AIBT-HC
80V/2.5A PEAK, HIGH FREQUENCY FU
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-40°C ~ 85°C (TA)
Surface Mount
20-SOIC (0.295", 7.50mm Width)
20-SOIC
9.5V ~ 15V
ICL7667MTV
DUAL POWER MOSFET DRIVER
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Quantity
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PCB Symbol, Footprint & 3D Model
-
0°C ~ 70°C (TA)
Through Hole
TO-99-8 Metal Can
TO-99-8
4.5V ~ 15V
Inverting
High-Side or Low-Side
Independent
2
N-Channel MOSFET
0.8V, 2V
-
-
20ns, 20ns
HIP5016IS1
HB BASED PERIPHERAL DRIVER W/PWM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-40°C ~ 85°C
Through Hole
7-SSIP Formed Leads
7-SIP
9.6V ~ 14.4V
Non-Inverting
Half-Bridge
Synchronous
1
N-Channel MOSFET
-
5A, 5A
-
20ns, 20ns
HIP5015IS1
HB BASED PERIPHERAL DRIVER W/PWM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-40°C ~ 85°C
Through Hole
7-SSIP Formed Leads
7-SIP
9.6V ~ 14.4V
Non-Inverting
Half-Bridge
Synchronous
1
N-Channel MOSFET
-
5A, 5A
-
20ns, 20ns
CA3252M
QUAD GATED NON-INVERTING POWER D
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-40°C ~ 105°C
Surface Mount
20-SOIC (0.295", 7.50mm Width)
20-SOIC
5V
Inverting, Non-Inverting
Low-Side
Synchronous
4
N-Channel MOSFET
0.8V, 2V
600mA, 600mA
35 V
-
HIP-2500IB
HALF BRIDGE 500VDC DRIVER
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
10V ~ 15V
Non-Inverting
Half-Bridge
Synchronous
2
N-Channel MOSFET
-
2A, 2A
500 V
25ns, 25ns
HIP6603CB
RECTIFIED BUCK MOSFET DRIVER
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Quantity
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PCB Symbol, Footprint & 3D Model
-
0°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
5V ~ 12V
Non-Inverting
Half-Bridge
Synchronous
2
N-Channel MOSFET
-
-
15 V
20ns, 20ns
HIP0063AB
HEX LOW SIDE MOSFET DRIVER W/SER
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-40°C ~ 125°C (TA)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
4.5V ~ 5.5V
Inverting
Low-Side
Independent
6
N-Channel, P-Channel MOSFET
1.5V, 3.5V
-
-
-
CA3252E
QUAD GATED NON-INVERTING POWER D
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-40°C ~ 105°C
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
5V
Inverting, Non-Inverting
Low-Side
Synchronous
4
N-Channel MOSFET
0.8V, 2V
600mA, 600mA
35 V
-

About  Gate Drivers

Gate Drivers are a combination of electronic components that work together to facilitate power management and control in various applications. Specifically, gate drivers are a type of IC that provide the necessary functions to interface control signals from a control device to semiconductor devices like FETs (Field-Effect Transistors) or IGBTs (Insulated Gate Bipolar Transistors) in power conversion applications. The primary purpose of gate drivers is to enable the control and switching of power flow through these semiconductor devices. They achieve this by providing functions such as isolation, amplification, reference shifting, bootstrapping, and other essential operations that ensure seamless signal transmission between the control device and the semiconductor devices. Isolation is crucial to prevent any interference or feedback between the control circuitry and the power circuitry, ensuring safety and stability in the system. Amplification allows the control signals to reach the necessary voltage or current levels required to drive the semiconductor devices effectively. Reference shifting ensures that the control signals align with the specific voltage levels of the semiconductor devices. Bootstrapping helps to enhance the efficiency of the gate drivers by utilizing energy from the power supply to boost the gate drive voltage. By providing these functionalities, gate driver PMICs enable precise control over power flow and efficient switching of semiconductor devices, resulting in optimized performance and reliability of power conversion systems. They are commonly used in motor control applications, renewable energy systems, power supplies, and other power electronics applications where efficient power management is essential. Overall, Integrated Circuits - Power Management - Gate Drivers form a critical part of power conversion systems, enabling effective communication and control between the control device and the semiconductor devices. They contribute to enhanced efficiency, reliability, and performance in various power management applications.