Photo Detectors - CdS Cells

Results:
75
Manufacturer
Series
Cell Resistance @ Illuminance
Cell Resistance (Min) @ Dark
Voltage - Max
Rise Time (Typ)
Wavelength
Operating Temperature
Fall Time (Typ)
Supplier Device Package
Package / Case
Mounting Type
Results remaining75
Select
ImageProduct DetailPriceAvailabilityECAD ModelSeriesMounting TypeWavelengthSupplier Device PackageOperating TemperaturePackage / CaseCell Resistance @ IlluminanceFall Time (Typ)Rise Time (Typ)Cell Resistance (Min) @ DarkVoltage - Max
NSL-45S5150
TO-18 PHOTOCELL (CDS PHOTORESIST
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
550nm
TO-18
-60°C ~ 75°C (TA)
TO-18-2
-
-
-
-
60Vpk
02-LDR15
12MM LDR 50K-100K OHM
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Quantity
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PCB Symbol, Footprint & 3D Model
LDR
Through Hole
560nm
Radial
-30°C ~ 70°C (TA)
Radial
50 ~ 100kOhm @ 10 lux
30 ms
30 ms
8 MOhms @ 10 s
250VDC
02-LDR2
PHOTOCELL 5-10K OHM
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Quantity
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PCB Symbol, Footprint & 3D Model
LDR
Through Hole
540nm
Radial
-30°C ~ 70°C (TA)
Radial
5 ~ 10kOhms @ 10 lux
30 ms
30 ms
500 Ohms @ 10 s
100VDC
02-LDR4
5MM LDR 30K-50K OHM
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Quantity
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PCB Symbol, Footprint & 3D Model
LDR
Through Hole
540nm
Radial
-30°C ~ 70°C (TA)
Radial
30 ~ 50kOhm @ 10 lux
30 ms
20 ms
3 MOhms @ 10 s
150VDC
02-LDR3
PHOTOCELL 100-200K OHM
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Quantity
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PCB Symbol, Footprint & 3D Model
LDR
Through Hole
540nm
Radial
-30°C ~ 70°C (TA)
Radial
100 ~ 200kOhms @ 10 lux
30 ms
20 ms
10 kOhms @ 10 s
100VDC
02-LDR14
10MM LDR 30K-50K OHM
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Quantity
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PCB Symbol, Footprint & 3D Model
LDR
Through Hole
560nm
Radial
-30°C ~ 70°C (TA)
Radial
30 ~ 50kOhm @ 10 lux
30 ms
30 ms
5 MOhms @ 10 s
250VDC
02-LDR13
12MM LDR 10K-20K OHM
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Quantity
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PCB Symbol, Footprint & 3D Model
LDR
Through Hole
560nm
Radial
-30°C ~ 70°C (TA)
Radial
10 ~ 20kOhm @ 10 lux
30 ms
30 ms
2 MOhms @ 10 s
250VDC
02-LDR20
20MM LDR 5K-10K OHM
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Quantity
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PCB Symbol, Footprint & 3D Model
LDR
Through Hole
560nm
Radial
-30°C ~ 70°C (TA)
Radial
5 ~ 10kOhm @ 10 lux
30 ms
30 ms
1 MOhms @ 10 s
500VDC
02-LDR22
20MM LDR 30K-50K OHM
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Quantity
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PCB Symbol, Footprint & 3D Model
LDR
Through Hole
560nm
Radial
-30°C ~ 70°C (TA)
Radial
30 ~ 50kOhm @ 10 lux
30 ms
30 ms
5 MOhms @ 10 s
500VDC
02-LDR23
20MM LDR 50K-100K OHM
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Quantity
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PCB Symbol, Footprint & 3D Model
LDR
Through Hole
560nm
Radial
-30°C ~ 70°C (TA)
Radial
50 ~ 100kOhm @ 10 lux
30 ms
30 ms
8 MOhms @ 10 s
500VDC
02-LDR21
20MM LDR 10K-20K OHM
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Quantity
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PCB Symbol, Footprint & 3D Model
LDR
Through Hole
560nm
Radial
-30°C ~ 70°C (TA)
Radial
10 ~ 20kOhm @ 10 lux
30 ms
30 ms
2 MOhms @ 10 s
500VDC
02-LDR12
12MM LDR 5K-10K OHM
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Quantity
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PCB Symbol, Footprint & 3D Model
LDR
Through Hole
560nm
Radial
-30°C ~ 70°C (TA)
Radial
5 ~ 10kOhm @ 10 lux
30 ms
30 ms
1 MOhms @ 10 s
250VDC
02-LDR1
PHOTOCELL 50-100K OHM
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Quantity
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PCB Symbol, Footprint & 3D Model
SEN-09088
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
540nm
Radial
-30°C ~ 70°C (TA)
Radial
8 ~ 20kOhms @ 10 lux
-
-
1 MOhms @ 10 s
150V
PART PHOTORESISTOR
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
-
-
-
-
NSL-5162
CDS PHOTORESISTOR
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
550nm
-
-60°C ~ 75°C (TA)
Radial
3 ~ 100kOhms @ 10 lux
-
-
67 MOhms @ 5 s
100Vpk
PDV-P9004
CDS PHOTORES 27K-60KOHM 4.20MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
520nm
-
-30°C ~ 75°C (TA)
Radial
27 ~ 60kOhms @ 10 lux
25 ms
60 ms
2 MOhms @ 10 s
150Vpk
PDV-P9006
CDS PHOTORES 80K-200KOHM 4.20MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
520nm
-
-30°C ~ 75°C (TA)
Radial
80 ~ 200kOhms @ 10 lux
25 ms
60 ms
5 MOhms @ 10 s
150Vpk
PDV-P9005-1
CDS PHOTORES 48K-140KOHM 4.20MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
520nm
-
-30°C ~ 75°C (TA)
Radial
48 ~ 140kOhms @ 10 lux
25 ms
60 ms
20 MOhms @ 10 s
150Vpk
PDV-P9003-1
CDS PHOTORES 23K-33KOHM 4.20MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
520nm
-
-30°C ~ 75°C (TA)
Radial
23 ~ 33kOhms @ 10 lux
25 ms
60 ms
1 MOhms @ 10 s
150Vpk

About  Photo Detectors - CdS Cells

Cadmium sulfide (CdS) photodetectors, commonly referred to as photoresistors, light-dependent resistors (LDRs), or photo-conductive cells, are semiconductor devices with high resistance that exhibit variable resistance based on incident light intensity. These devices are widely used in applications where light detection and control are required. The fundamental operation of a CdS photodetector is based on the principle of photoconductivity. When no light is present, the CdS material has a high resistance, limiting the flow of electric current. However, when exposed to light, the photons excite electrons in the CdS, causing them to migrate and reducing the resistance of the material. As a result, the device acts as a light-controlled variable resistor. Photoresistors are selected based on various characteristics, including cell resistance, maximum voltage, and rise and fall times. The cell resistance determines the initial resistance of the device in darkness, while the maximum voltage specifies the highest voltage that can be applied across the photoresistor without damaging it. Rise and fall times refer to the speed at which the resistance changes when the light intensity increases or decreases. These photodetectors find applications in diverse fields, including light sensing, automatic lighting control, burglar alarms, camera exposure control, and robotics. Their ability to detect and respond to changes in light intensity makes them useful in situations where automatic adjustments or triggering based on ambient light conditions are required. In summary, CdS photodetectors, also called photoresistors or LDRs, are semiconductor devices with high resistance that vary their resistance based on incident light intensity. They operate on the principle of photoconductivity, with the resistance decreasing as the light intensity increases. Photoresistors are chosen based on characteristics such as cell resistance, maximum voltage, and rise and fall times. These devices have numerous applications in light sensing, automatic control systems, burglar alarms, and more, where their light-dependent resistance enables responsive adjustments to ambient light conditions.