Phototransistors

Results:
855
Manufacturer
Series
Package / Case
Current - Collector (Ic) (Max)
Viewing Angle
Operating Temperature
Wavelength
Current - Dark (Id) (Max)
Voltage - Collector Emitter Breakdown (Max)
Power - Max
Mounting Type
Orientation
Qualification
Grade
Results remaining855
Select
ImageProduct DetailPriceAvailabilityECAD ModelSeriesMounting TypeOperating TemperaturePackage / CaseWavelengthViewing AngleVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Current - Dark (Id) (Max)Power - MaxOrientationGradeQualification
LTR-3208E
SENSOR PHOTO 940NM TOP VIEW RAD
1+
$0.0875
5+
$0.0826
10+
$0.0778
Quantity
67,968 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Through Hole
-40°C ~ 85°C (TA)
Radial
940nm
20°
30 V
3.12 mA
100 nA
100 mW
Top View
-
-
LTR-4206E
SENSOR PHOTO 940NM TOP VIEW T1
1+
$0.0750
5+
$0.0708
10+
$0.0667
Quantity
66,850 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Through Hole
-40°C ~ 85°C (TA)
T-1
940nm
20°
30 V
4.8 mA
100 nA
100 mW
Top View
-
-
VEMT2020X01
1+
$0.3000
5+
$0.2833
10+
$0.2667
Quantity
36,102 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-40°C ~ 100°C (TA)
2-SMD, Gull Wing
860nm
30°
20 V
50 mA
100 nA
100 mW
Top View
Automotive
AEC-Q101
LTR-301
SENSOR PHOTO 940NM SIDE VIEW RAD
1+
$0.0800
5+
$0.0756
10+
$0.0711
Quantity
28,256 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Through Hole
-40°C ~ 85°C (TA)
Radial
940nm
70°
30 V
2.4 mA
100 nA
100 mW
Side View
-
-
TEMT1000
SENSOR PHOTO 950NM TOP VIEW 2SMD
1+
$0.3525
5+
$0.3329
10+
$0.3133
Quantity
25,473 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-40°C ~ 85°C (TA)
2-SMD, Z-Bend
950nm
30°
70 V
50 mA
200 nA
100 mW
Top View
-
-
ALS-PT19-315C/L177/TR8
1+
$0.0825
5+
$0.0779
10+
$0.0733
Quantity
24,150 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-40°C ~ 85°C (TA)
2-SMD, No Lead
630nm
-
5.5 V
-
100 nA
-
-
-
-
1540801NBA300
WL-STCW SMT PHOTOTRANSISTOR CHIP
1+
$0.3800
5+
$0.3589
10+
$0.3378
Quantity
24,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
WL-STCW
Surface Mount
-40°C ~ 85°C
0805 (2012 Metric)
940nm
130°
35 V
20 mA
100 nA
150 mW
Top View
-
-
TEMT1020
PHOTOTRANSISTOR 730 TO 1000 NM
1+
$0.2000
5+
$0.1889
10+
$0.1778
Quantity
10,706 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-40°C ~ 85°C (TA)
2-SMD, Gull Wing
880nm
30°
70 V
50 mA
200 nA
100 mW
Top View
-
-
QSD123A4R0
PHOTO TRANSISTOR, 880NM
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
Through Hole
-
Radial, 5mm Dia (T 1 3/4)
880nm
24°
30 V
16 mA
100 nA
100 mW
Top View
SD5443-003
1+
$15.0000
5+
$14.1667
10+
$13.3333
Quantity
2,275 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Through Hole
-55°C ~ 125°C (TA)
TO-46-3 Metal Can
-
18°
30 V
8 mA
100 nA
150 mW
Top View
-
-
QSD124A4R0
SENSOR PHOTO 880NM TOP VIEW RAD
1+
$1.1250
5+
$1.0625
10+
$1.0000
Quantity
1,100 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Through Hole
-40°C ~ 100°C (TA)
Radial, 5mm Dia (T 1 3/4)
880nm
24°
30 V
-
100 nA
100 mW
Top View
-
-
SFH 309 FA-4/5 RN18C
SENSOR PHOTO 900NM TOP VIEW RAD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
Through Hole
-40°C ~ 100°C (TA)
Radial, T-1 Lens
900nm
24°
35 V
15 mA
200 nA
165 mW
Top View
SFH 309-4 RN18A
SENSOR PHOTO 860NM TOP VIEW RAD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
Through Hole
-40°C ~ 100°C (TA)
Radial
860nm
24°
35 V
15 mA
200 nA
165 mW
Top View
SFH 3201-3-Z
SENSOR PHOTO 850NM TOP VIEW 6SMD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-40°C ~ 100°C
6-SMD, Gull Wing
850nm
120°
20 V
50 mA
200 nA
120 mW
Top View
SFH 3400-2-Z
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
-
-
-
-
QSB363CZR
PHOTO TRANSISTOR, 940NM
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-25°C ~ 85°C (TA)
2-SMD, Z-Bend
940nm
24°
30 V
-
100 nA
75 mW
Top View
QSC114C
PHOTO TRANSISTOR, 880NM
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
Through Hole
-
Radial, 3mm Dia (T-1)
880nm
30 V
-
100 nA
100 mW
Top View
LS600
PHOTO TRANSISTOR
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-65°C ~ 125°C
Pill
-
-
50 V
100 µA
25 nA
50 mW
Top View
OP520
SENSOR PHOTO 935NM TOP VIEW 1206
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-25°C ~ 85°C (TA)
1206 (3216 Metric)
935nm
-
30 V
20 mA
100 nA
75 mW
Top View
KDT00030ATR
PHOTO TRANSISTOR, 630NM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-40°C ~ 85°C (TA)
2-SMD, J-Lead
630nm
-
6 V
1.1 mA
40 nA
-
Top View

About  Phototransistors

The phototransistor family consists of discrete light-sensitive components that exhibit similar behavior to bipolar transistors. However, unlike bipolar transistors that rely on an electrical current applied through a device terminal, phototransistors utilize incident light to induce conduction. Phototransistors offer several advantages compared to photodiodes. One notable advantage is that they generally generate a larger output current in response to the same intensity of incident light. This higher output current makes phototransistors more suitable for applications where a higher signal strength is desired. On the other hand, phototransistors have a slower response time to changes in light intensity compared to photodiodes. This means that they may not be as well-suited for high-speed operations that require rapid detection and response to light variations. Due to their simpler application and higher output current capabilities, phototransistors are often preferred in situations where simplicity and signal strength are more critical than speed. They find common use in applications such as ambient light sensing, optical switches, encoders, and remote control systems. It is important to consider the specific requirements of a given application when selecting between phototransistors and photodiodes, taking into account factors such as sensitivity, response time, and signal strength. By understanding the unique characteristics and trade-offs of phototransistors, engineers can make informed decisions to optimize their designs for different light sensing scenarios.