Silicon Capacitors

Results:
322
Manufacturer
Series
Capacitance
Size / Dimension
Package / Case
Height
Voltage - Breakdown
ESR (Equivalent Series Resistance)
Operating Temperature
Applications
Tolerance
ESL (Equivalent Series Inductance)
Features
Results remaining322
Select
ImageProduct DetailPriceAvailabilityECAD ModelFeaturesApplicationsOperating TemperaturePackage / CaseCapacitanceToleranceSeriesVoltage - BreakdownESL (Equivalent Series Inductance)HeightSize / DimensionESR (Equivalent Series Resistance)
RFCS04021500CBTWS
CAP SILICON 1.5PF 50V 0402
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-55°C ~ 125°C
0402 (1005 Metric)
1.5 pF
±0.1pF
RFCS
50 V
-
0.016" (0.41mm)
0.040" L x 0.020" W (1.02mm x 0.51mm)
-
RFCS04025000DBTWS
CAP SILICON 0.5PF 50V 0402
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-55°C ~ 125°C
0402 (1005 Metric)
0.5 pF
±0.1pF
RFCS
50 V
-
0.016" (0.41mm)
0.040" L x 0.020" W (1.02mm x 0.51mm)
-
RFCS04024700CJTWS
CAP SILICON 4.7PF 25V 0402
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-55°C ~ 125°C
0402 (1005 Metric)
4.7 pF
±5%
RFCS
25 V
-
0.016" (0.41mm)
0.040" L x 0.020" W (1.02mm x 0.51mm)
-
RFCS04023900CJTWS
CAP SILICON 3.9PF 25V 0402
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-55°C ~ 125°C
0402 (1005 Metric)
3.9 pF
±5%
RFCS
25 V
-
0.016" (0.41mm)
0.040" L x 0.020" W (1.02mm x 0.51mm)
-
RFCS04023000DBTWS
CAP SILICON 0.3PF 50V 0402
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-55°C ~ 125°C
0402 (1005 Metric)
0.3 pF
±0.1pF
RFCS
50 V
-
0.016" (0.41mm)
0.040" L x 0.020" W (1.02mm x 0.51mm)
-
RFCS04022700CKTWS
CAP SILICON 2.7PF 50V 0402
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-55°C ~ 125°C
0402 (1005 Metric)
2.7 pF
±10%
RFCS
50 V
-
0.016" (0.41mm)
0.040" L x 0.020" W (1.02mm x 0.51mm)
-
RFCS04022700BJTWS
CAP SILICON 27PF 10V 0402
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-55°C ~ 125°C
0402 (1005 Metric)
27 pF
±5%
RFCS
10 V
-
0.016" (0.41mm)
0.040" L x 0.020" W (1.02mm x 0.51mm)
-
RFCS04022200BJTWS
CAP SILICON 22PF 10V 0402
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-55°C ~ 125°C
0402 (1005 Metric)
22 pF
±5%
RFCS
10 V
-
0.016" (0.41mm)
0.040" L x 0.020" W (1.02mm x 0.51mm)
-
RFCS04021800CBTWS
CAP SILICON 1.8PF 50V 0402
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-55°C ~ 125°C
0402 (1005 Metric)
1.8 pF
±0.1pF
RFCS
50 V
-
0.016" (0.41mm)
0.040" L x 0.020" W (1.02mm x 0.51mm)
-
RFCS04021800BJTWS
CAP SILICON 18PF 16V 0402
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-55°C ~ 125°C
0402 (1005 Metric)
18 pF
±5%
RFCS
16 V
-
0.016" (0.41mm)
0.040" L x 0.020" W (1.02mm x 0.51mm)
-
GC84001-00
SI CAPACITOR NON HERMETIC CHIP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-55°C ~ 150°C
Nonstandard SMD
1 pF
±10%
-
100 V
-
0.007" (0.18mm)
0.010" L x 0.010" W (0.25mm x 0.25mm)
-
RFCS04021200CBTWS
CAP SILICON 1.2PF 50V 0402
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-55°C ~ 125°C
0402 (1005 Metric)
1.2 pF
±0.1pF
RFCS
50 V
-
0.016" (0.41mm)
0.040" L x 0.020" W (1.02mm x 0.51mm)
-
RFCS04021200BJTWS
CAP SILICON 12PF 16V 0402
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-55°C ~ 125°C
0402 (1005 Metric)
12 pF
±5%
RFCS
16 V
-
0.016" (0.41mm)
0.040" L x 0.020" W (1.02mm x 0.51mm)
-
GC84040-00
SI CAPACITOR NON HERMETIC CHIP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-55°C ~ 150°C
Nonstandard SMD
40 pF
±10%
-
100 V
-
0.007" (0.18mm)
0.020" L x 0.020" W (0.51mm x 0.51mm)
-
GC84004-00
SI CAPACITOR NON HERMETIC CHIP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-55°C ~ 150°C
Nonstandard SMD
4 pF
±10%
-
100 V
-
0.007" (0.18mm)
0.015" L x 0.015" W (0.38mm x 0.38mm)
-
GC83001-00
SI CAPACITOR NON HERMETIC CHIP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
-
-
-
-
-
GC84020-00
SI CAPACITOR NON HERMETIC CHIP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-55°C ~ 150°C
Nonstandard SMD
20 pF
±10%
-
100 V
-
0.007" (0.18mm)
0.020" L x 0.020" W (0.51mm x 0.51mm)
-
GC84200-00
SI CAPACITOR NON HERMETIC CHIP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-55°C ~ 150°C
Nonstandard SMD
200 pF
±10%
-
100 V
-
0.007" (0.18mm)
0.040" L x 0.040" W (1.02mm x 1.02mm)
-
GC83004-00
SI CAPACITOR NON HERMETIC CHIP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
-
-
-
-
-
GC84030-00
SI CAPACITOR NON HERMETIC CHIP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-55°C ~ 150°C
Nonstandard SMD
30 pF
±10%
-
100 V
-
0.007" (0.18mm)
0.020" L x 0.020" W (0.51mm x 0.51mm)
-

Silicon Capacitors

Silicon and thin-film capacitors are specialized devices that are manufactured using tools, methods, and materials commonly associated with semiconductor device production. This enables the production of capacitors with near-ideal characteristics and exceptional parameter stability. However, these capacitors have a limited range of available values and tend to be more expensive compared to ceramic-based capacitors, which are their primary competitors. The manufacturing process of silicon and thin-film capacitors allows for extreme precision and control over the production parameters. This results in capacitors that exhibit excellent stability in terms of capacitance, voltage ratings, and other electrical properties. They are designed to maintain their specified values over time and under varying conditions, making them ideal for applications that require precise and reliable performance. Despite their advantages, silicon and thin-film capacitors have a relatively narrow range of available capacitance values compared to ceramic-based capacitors. This limitation may restrict their use in certain applications that require a broader range of capacitance options. Furthermore, the cost of manufacturing silicon and thin-film capacitors is generally higher due to the specialized processes and materials involved. As a result, these capacitors are often considered more expensive compared to ceramic-based alternatives. In summary, silicon and thin-film capacitors are produced using semiconductor manufacturing techniques, allowing for the creation of capacitors with near-ideal characteristics and excellent parameter stability. While they have a limited range of capacitance values, they are well-suited for applications that demand precise and reliable performance. However, their higher cost compared to ceramic-based capacitors is an important consideration when selecting the appropriate capacitor for a given application.