TrenchMOS™ Series, Single FETs, MOSFETs

Results:
1,020
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
Qualification
FET Type
Grade
Mounting Type
Technology
Results remaining1,020
Applied Filters:
TrenchMOS™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseFET TypeSupplier Device PackageDrain to Source Voltage (Vdss)Operating TemperatureGradeSeriesTechnologyFET FeatureVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
BUK9506-55A,127
MOSFET N-CH 55V 75A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
55 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
-
75A (Tc)
4.5V, 10V
5.8mOhm @ 25A, 10V
±15V
8600 pF @ 25 V
300W (Tc)
-
BUK9518-55,127
MOSFET N-CH 55V 57A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
55 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
-
57A (Tc)
5V
18mOhm @ 25A, 5V
±10V
2600 pF @ 25 V
125W (Tc)
-
BUK9508-55A,127
MOSFET N-CH 55V 75A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
55 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
92 nC @ 5 V
75A (Tc)
4.5V, 10V
7.5mOhm @ 25A, 10V
±15V
6021 pF @ 25 V
253W (Tc)
-
BUK9520-55,127
MOSFET N-CH 55V 52A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
55 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
-
52A (Tc)
5V
20mOhm @ 25A, 5V
±10V
2400 pF @ 25 V
116W (Tc)
-
BUK9528-100A,127
MOSFET N-CH 100V 49A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
100 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
-
49A (Tc)
4.5V, 10V
27mOhm @ 25A, 10V
±10V
4293 pF @ 25 V
166W (Tc)
-
BUK9611-55A,118
MOSFET N-CH 55V 75A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
D2PAK
55 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
-
75A (Tc)
4.5V, 10V
10mOhm @ 25A, 10V
±10V
4230 pF @ 25 V
166W (Tc)
-
BUK9608-55,118
MOSFET N-CH 55V 75A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
D2PAK
55 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
-
75A (Tc)
5V
8mOhm @ 25A, 5V
±10V
6900 pF @ 25 V
187W (Tc)
-
PH3855L,115
MOSFET N-CH 55V 24A LFPAK56
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
SC-100, SOT-669
N-Channel
LFPAK56, Power-SO8
55 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
11.7 nC @ 5 V
24A (Tc)
4.5V, 10V
36mOhm @ 15A, 10V
±15V
765 pF @ 25 V
50W (Tc)
-
PH8030L,115
MOSFET N-CH 30V 76.7A LFPAK56
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
SC-100, SOT-669
N-Channel
LFPAK56, Power-SO8
30 V
-55°C ~ 150°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2.15V @ 1mA
15.2 nC @ 4.5 V
76.7A (Tc)
4.5V, 10V
5.9mOhm @ 25A, 10V
±20V
2260 pF @ 12 V
62.5W (Tc)
-
PHB108NQ03LT,118
MOSFET N-CH 25V 75A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
D2PAK
25 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
16.3 nC @ 4.5 V
75A (Tc)
5V, 10V
6mOhm @ 25A, 10V
±20V
1375 pF @ 12 V
187W (Tc)
-
PHB112N06T,118
MOSFET N-CH 55V 75A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
D2PAK
55 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
87 nC @ 10 V
75A (Tc)
10V
8mOhm @ 25A, 10V
±20V
4352 pF @ 25 V
200W (Tc)
-
PHB153NQ08LT,118
MOSFET N-CH 75V 75A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
D2PAK
75 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
95 nC @ 5 V
75A (Tc)
4.5V, 10V
5.5mOhm @ 25A, 10V
±15V
8770 pF @ 25 V
300W (Tc)
-
PHP160NQ08T,127
MOSFET N-CH 75V 75A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
75 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
91 nC @ 10 V
75A (Tc)
10V
5.6mOhm @ 25A, 10V
±20V
5585 pF @ 25 V
300W (Tc)
-
PHP45N03LTA,127
MOSFET N-CH 25V 40A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
25 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
19 nC @ 5 V
40A (Tc)
3.5V, 10V
21mOhm @ 25A, 10V
±20V
700 pF @ 25 V
65W (Tc)
-
PHP54N06T,127
MOSFET N-CH 55V 54A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
55 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
36 nC @ 10 V
54A (Tc)
10V
20mOhm @ 25A, 10V
±20V
1592 pF @ 25 V
118W (Tc)
-
PHP55N03LTA,127
MOSFET N-CH 25V 55A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
25 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
20 nC @ 5 V
55A (Tc)
5V, 10V
14mOhm @ 25A, 10V
±20V
950 pF @ 25 V
85W (Tc)
-
PHP63NQ03LT,127
MOSFET N-CH 30V 68.9A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
30 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2.5V @ 1mA
9.6 nC @ 5 V
68.9A (Tc)
5V, 10V
13mOhm @ 25A, 10V
±20V
920 pF @ 25 V
111W (Tc)
-
PHT11N06LT,135
MOSFET N-CH 55V 4.9A SOT223
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-261-4, TO-261AA
N-Channel
SC-73
55 V
-55°C ~ 150°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
17 nC @ 5 V
4.9A (Ta)
5V
40mOhm @ 5A, 5V
±13V
1400 pF @ 25 V
1.8W (Ta), 8.3W (Tc)
-
PHP71NQ03LT,127
MOSFET N-CH 30V 75A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
30 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2.5V @ 1mA
13.2 nC @ 5 V
75A (Tc)
5V, 10V
10mOhm @ 25A, 10V
±20V
1220 pF @ 25 V
120W (Tc)
-
PHX14NQ20T,127
MOSFET N-CH 200V 7.6A TO220F
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3 Full Pack, Isolated Tab
N-Channel
TO-220F
200 V
-55°C ~ 150°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
38 nC @ 10 V
7.6A (Tc)
10V
230mOhm @ 7A, 10V
±20V
1500 pF @ 25 V
30W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.