TrenchMOS™ Series, Single FETs, MOSFETs

Results:
1,020
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
Qualification
FET Type
Grade
Mounting Type
Technology
Results remaining1,020
Applied Filters:
TrenchMOS™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeGradeSeriesPackage / CaseTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSupplier Device PackageDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
PMCM440VNE/S500Z
MOSFET N-CHANNEL 12V 5A 4WLCSP
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TrenchMOS™
4-XFBGA, WLCSP
MOSFET (Metal Oxide)
-
5A (Ta)
900mV @ 250µA
4-WLCSP (0.78x0.78)
12 V
1.5V, 4.5V
67mOhm @ 3A, 4.5V
8.2 nC @ 4.5 V
±8V
360 pF @ 6 V
12.5W (Tc)
-
BUK6Y20-30PX
MOSFET P-CH 30V 41A LFPAK56
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
P-Channel
Automotive
TrenchMOS™
SC-100, SOT-669
MOSFET (Metal Oxide)
-
41A (Ta)
3V @ 250µA
LFPAK56, Power-SO8
30 V
4.5V, 10V
20mOhm @ 8.6A, 10V
28 nC @ 10 V
±20V
1408 pF @ 15 V
66W (Ta)
AEC-Q101
BUK6Y25-40PX
MOSFET P-CH 40V 38A LFPAK56
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
P-Channel
Automotive
TrenchMOS™
SC-100, SOT-669
MOSFET (Metal Oxide)
-
38A (Ta)
3V @ 250µA
LFPAK56, Power-SO8
40 V
4.5V, 10V
25mOhm @ 7.9A, 10V
50 nC @ 10 V
±20V
1591 pF @ 20 V
66W (Ta)
AEC-Q101
BUK9875-100A/CUX
NEXPERIA BUK9875 - N-CHANNEL MOS
1+
$0.5500
5+
$0.5194
10+
$0.4889
Quantity
15,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
Automotive
TrenchMOS™
TO-261-4, TO-261AA
MOSFET (Metal Oxide)
-
7A (Tc)
2V @ 1mA
SOT-223
100 V
4.5V, 10V
72mOhm @ 8A, 10V
-
±10V
1690 pF @ 25 V
8W (Tc)
AEC-Q100
PMPB10XNEAX
PMPB10XNEA - 20 V, N-CHANNEL TRE
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
Automotive
TrenchMOS™
6-UDFN Exposed Pad
MOSFET (Metal Oxide)
-
9A (Ta)
900mV @ 250µA
DFN2020MD-6
20 V
1.8V, 4.5V
14mOhm @ 9A, 4.5V
34 nC @ 4.5 V
±12V
2175 pF @ 10 V
1.7W (Ta), 12.5W (Tc)
AEC-Q101
PMPB43XPEAX
PMPB43XPEA - 20 V, P-CHANNEL TRE
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
Automotive
TrenchMOS™
6-UDFN Exposed Pad
MOSFET (Metal Oxide)
-
5A (Ta)
1V @ 250µA
DFN2020MD-6
20 V
1.8V, 4.5V
48mOhm @ 5A, 4.5V
23.4 nC @ 4.5 V
±12V
1550 pF @ 10 V
1.7W (Ta), 12.5W (Tc)
AEC-Q101
PMK30EP,518
MOSFET P-CH 30V 14.9A 8SO
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
-
TrenchMOS™
8-SOIC (0.154", 3.90mm Width)
MOSFET (Metal Oxide)
-
14.9A (Tc)
3V @ 250µA
8-SO
30 V
10V
19mOhm @ 9.2A, 10V
50 nC @ 10 V
±20V
2240 pF @ 25 V
6.9W (Tc)
-
PMK50XP,518
MOSFET P-CH 20V 7.9A 8SO
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
-
TrenchMOS™
8-SOIC (0.154", 3.90mm Width)
MOSFET (Metal Oxide)
-
7.9A (Tc)
950mV @ 250µA
8-SO
20 V
4.5V
50mOhm @ 2.8A, 4.5V
10 nC @ 4.5 V
±12V
1020 pF @ 20 V
5W (Tc)
-
PML260SN,118
MOSFET N-CH 200V 8.8A DFN3333-8
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TrenchMOS™
8-VDFN Exposed Pad
MOSFET (Metal Oxide)
-
8.8A (Tc)
4V @ 1mA
DFN3333-8
200 V
6V, 10V
294mOhm @ 2.6A, 10V
13.3 nC @ 10 V
±20V
657 pF @ 30 V
50W (Tc)
-
PML340SN,118
MOSFET N-CH 220V 7.3A DFN3333-8
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TrenchMOS™
8-VDFN Exposed Pad
MOSFET (Metal Oxide)
-
7.3A (Tc)
4V @ 1mA
DFN3333-8
220 V
6V, 10V
386mOhm @ 2.6A, 10V
13.2 nC @ 10 V
±20V
656 pF @ 30 V
50W (Tc)
-
BUK625R2-30C,118
MOSFET N-CH 30V 90A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
Automotive
TrenchMOS™
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
-
90A (Tc)
2.8V @ 1mA
DPAK
30 V
10V
5.2mOhm @ 15A, 10V
54.8 nC @ 10 V
±16V
3470 pF @ 25 V
128W (Tc)
AEC-Q101
BUK7108-40AIE,118
MOSFET N-CH 40V 75A SOT426
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
Automotive
TrenchMOS™
TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
MOSFET (Metal Oxide)
Current Sensing
75A (Tc)
4V @ 1mA
SOT-426
40 V
10V
8mOhm @ 50A, 10V
84 nC @ 10 V
±20V
3140 pF @ 25 V
221W (Tc)
AEC-Q101
BUK7604-40A,118
MOSFET N-CH 40V 75A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
Automotive
TrenchMOS™
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
-
75A (Tc)
4V @ 1mA
D2PAK
40 V
10V
4.5mOhm @ 25A, 10V
117 nC @ 10 V
±20V
5730 pF @ 25 V
300W (Tc)
AEC-Q101
BUK7226-75A,118
MOSFET N-CH 75V 45A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
Automotive
TrenchMOS™
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
-
45A (Tc)
4V @ 1mA
DPAK
75 V
10V
26mOhm @ 25A, 10V
48 nC @ 10 V
±20V
2385 pF @ 25 V
158W (Tc)
AEC-Q101
BUK7609-55A,118
MOSFET N-CH 55V 75A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
TrenchMOS™
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
-
75A (Tc)
4V @ 1mA
D2PAK
55 V
10V
9mOhm @ 25A, 10V
62 nC @ 0 V
±20V
3271 pF @ 25 V
211W (Tc)
-
BUK7640-100A,118
MOSFET N-CH 100V 37A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
Automotive
TrenchMOS™
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
-
37A (Tc)
4V @ 1mA
D2PAK
100 V
10V
40mOhm @ 25A, 10V
-
±20V
2293 pF @ 25 V
138W (Tc)
AEC-Q101
BUK78150-55A,115
MOSFET N-CH 55V 5.5A SOT223
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
Automotive
TrenchMOS™
TO-261-4, TO-261AA
MOSFET (Metal Oxide)
-
5.5A (Tc)
4V @ 1mA
SC-73
55 V
10V
150mOhm @ 5A, 10V
-
±20V
230 pF @ 25 V
8W (Tc)
AEC-Q101
BUK7C06-40AITE,118
MOSFET N-CH 40V 75A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
Automotive
TrenchMOS™
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
MOSFET (Metal Oxide)
Current Sensing
75A (Tc)
4V @ 1mA
D2PAK
40 V
10V
6mOhm @ 50A, 10V
120 nC @ 10 V
±20V
4300 pF @ 25 V
272W (Tc)
AEC-Q101
BUK96180-100A,118
MOSFET N-CH 100V 11A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
Automotive
TrenchMOS™
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
-
11A (Tc)
2V @ 1mA
D2PAK
100 V
5V, 10V
173mOhm @ 5A, 10V
-
±15V
619 pF @ 25 V
54W (Tc)
AEC-Q101
BUK9620-55A,118
MOSFET N-CH 55V 54A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
Automotive
TrenchMOS™
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
-
54A (Tc)
2V @ 1mA
D2PAK
55 V
4.5V, 10V
18mOhm @ 25A, 10V
-
±10V
2210 pF @ 25 V
118W (Tc)
AEC-Q101

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.