TrenchMOS™ Series, Single FETs, MOSFETs

Results:
1,020
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
Qualification
FET Type
Grade
Mounting Type
Technology
Results remaining1,020
Applied Filters:
TrenchMOS™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeDrain to Source Voltage (Vdss)GradeSeriesTechnologyFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
PMK35EP,518
MOSFET P-CH 30V 14.9A 8SO
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SO
P-Channel
30 V
-
TrenchMOS™
MOSFET (Metal Oxide)
-
3V @ 250µA
14.9A (Tc)
10V
19mOhm @ 9.2A, 10V
42 nC @ 10 V
±25V
2100 pF @ 25 V
6.9W (Tc)
-
BUK626R2-40C,118
MOSFET N-CH 40V 90A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
N-Channel
40 V
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
2.8V @ 1mA
90A (Tc)
10V
6.2mOhm @ 15A, 10V
67 nC @ 10 V
±16V
3720 pF @ 25 V
128W (Tc)
AEC-Q101
BUK9107-40ATC,118
MOSFET N-CH 40V 75A SOT426
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
D2PAK
N-Channel
40 V
-
TrenchMOS™
MOSFET (Metal Oxide)
Temperature Sensing Diode
2V @ 1mA
75A (Tc)
4.5V, 10V
6.2mOhm @ 50A, 10V
-
±15V
5836 pF @ 25 V
272W (Tc)
-
BUK9215-55A,118
MOSFET N-CH 55V 55A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
N-Channel
55 V
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
55A (Tc)
4.5V, 10V
13.6mOhm @ 25A, 10V
48 nC @ 5 V
±15V
2916 pF @ 25 V
115W (Tc)
AEC-Q101
BUK9222-55A,118
MOSFET N-CH 55V 48A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
N-Channel
55 V
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
48A (Tc)
4.5V, 10V
20mOhm @ 25A, 10V
-
±15V
2210 pF @ 25 V
103W (Tc)
AEC-Q101
BUK9609-55A,118
MOSFET N-CH 55V 75A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
N-Channel
55 V
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
75A (Tc)
4.5V, 10V
8mOhm @ 25A, 10V
60 nC @ 5 V
±15V
4633 pF @ 25 V
211W (Tc)
-
BUK9245-55A,118
MOSFET N-CH 55V 28A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
N-Channel
55 V
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
28A (Tc)
4.5V, 10V
40mOhm @ 5A, 10V
14 nC @ 5 V
±15V
1006 pF @ 25 V
70W (Tc)
AEC-Q101
BUK9628-100A,118
MOSFET N-CH 100V 49A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
N-Channel
100 V
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
49A (Tc)
5V, 10V
27mOhm @ 25A, 10V
-
±10V
4293 pF @ 25 V
166W (Tc)
AEC-Q101
PHB20NQ20T,118
MOSFET N-CH 200V 20A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
N-Channel
200 V
-
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
20A (Tc)
10V
130mOhm @ 10A, 10V
65 nC @ 10 V
±20V
2470 pF @ 25 V
150W (Tc)
-
BUK9660-100A,118
MOSFET N-CH 100V 26A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
N-Channel
100 V
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 1mA
26A (Tc)
4.5V, 10V
58mOhm @ 15A, 10V
-
±10V
1924 pF @ 25 V
106W (Tc)
AEC-Q101
PMPB12EPX
MOSFET P-CH 30V 7.9A DFN2020MD-6
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-UDFN Exposed Pad
DFN2020MD-6
P-Channel
30 V
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2V @ 250µA
7.9A (Ta)
4.5V, 10V
17.3mOhm @ 7.9A, 10V
39.9 nC @ 10 V
±20V
227 pF @ 15 V
1.7W (Ta), 13W (Tc)
-
BUK761R7-40E,118
MOSFET N-CH 40V 120A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
N-Channel
40 V
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
120A (Tc)
10V
1.6mOhm @ 25A, 10V
118 nC @ 10 V
±20V
9700 pF @ 25 V
324W (Tc)
AEC-Q101
BUK762R0-40E,118
MOSFET N-CH 40V 120A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
N-Channel
40 V
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
120A (Tc)
10V
2mOhm @ 25A, 10V
109.2 nC @ 10 V
±20V
8500 pF @ 25 V
293W (Tc)
AEC-Q101
BUK769R6-80E,118
MOSFET N-CH 80V 75A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
N-Channel
80 V
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
75A (Tc)
10V
9.6mOhm @ 20A, 10V
59.8 nC @ 10 V
±20V
4682 pF @ 25 V
182W (Tc)
AEC-Q101
BUK9615-100E,118
MOSFET N-CH 100V 66A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
N-Channel
100 V
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
2.1V @ 1mA
66A (Tc)
5V, 10V
14mOhm @ 15A, 10V
60 nC @ 5 V
±10V
6813 pF @ 25 V
182W (Tc)
AEC-Q101
BUK961R7-40E,118
MOSFET N-CH 40V 120A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
N-Channel
40 V
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2.1V @ 1mA
120A (Tc)
5V, 10V
1.5mOhm @ 25A, 10V
105.4 nC @ 5 V
±10V
15010 pF @ 25 V
324W (Tc)
-
BUK962R6-40E,118
MOSFET N-CH 40V 100A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
N-Channel
40 V
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
2.1V @ 250µA
100A (Tc)
5V, 10V
2.4mOhm @ 25A, 10V
80.6 nC @ 32 V
±10V
10285 pF @ 25 V
263W (Tc)
AEC-Q101
BUK962R1-40E,118
MOSFET N-CH 40V 120A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
N-Channel
40 V
-
TrenchMOS™
MOSFET (Metal Oxide)
-
2.1V @ 1mA
120A (Tc)
5V, 10V
1.8mOhm @ 25A, 10V
87.8 nC @ 5 V
±10V
13160 pF @ 25 V
293W (Tc)
-
BUK963R1-40E,118
MOSFET N-CH 40V 100A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
N-Channel
40 V
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
2.1V @ 1mA
100A (Tc)
5V, 10V
2.7mOhm @ 25A, 10V
69.5 nC @ 5 V
±10V
9150 pF @ 25 V
234W (Tc)
AEC-Q101
BUK751R6-30E,127
MOSFET N-CH 30V 120A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-220-3
TO-220AB
N-Channel
30 V
-
TrenchMOS™
MOSFET (Metal Oxide)
-
4V @ 1mA
120A (Tc)
10V
1.6mOhm @ 25A, 10V
154 nC @ 10 V
±20V
11960 pF @ 25 V
349W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.