TrenchMOS™ Series, Single FETs, MOSFETs

Results:
1,020
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
Qualification
FET Type
Grade
Mounting Type
Technology
Results remaining1,020
Applied Filters:
TrenchMOS™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseFET TypeSupplier Device PackageDrain to Source Voltage (Vdss)Operating TemperatureGradeSeriesTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
BUK7514-60E,127
MOSFET N-CH 60V 58A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
60 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
58A (Tc)
13mOhm @ 15A, 10V
4V @ 1mA
10V
22.9 nC @ 10 V
±20V
1730 pF @ 25 V
96W (Tc)
-
BUK752R7-60E,127
MOSFET N-CH 60V 120A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
60 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
120A (Tc)
2.6mOhm @ 25A, 10V
4V @ 1mA
10V
158 nC @ 10 V
±20V
11180 pF @ 25 V
349W (Tc)
-
BUK753R5-60E,127
MOSFET N-CH 60V 120A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
60 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
120A (Tc)
3.5mOhm @ 25A, 10V
4V @ 1mA
10V
114 nC @ 10 V
±20V
8920 pF @ 25 V
293W (Tc)
-
BUK754R7-60E,127
MOSFET N-CH 60V 100A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
60 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
100A (Tc)
4.6mOhm @ 25A, 10V
4V @ 1mA
10V
82 nC @ 10 V
±20V
6230 pF @ 25 V
234W (Tc)
-
BUK7E1R6-30E,127
MOSFET N-CH 30V 120A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
I2PAK
30 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
120A (Tc)
1.6mOhm @ 25A, 10V
4V @ 1mA
10V
154 nC @ 10 V
±20V
11960 pF @ 25 V
349W (Tc)
-
BUK7E4R0-80E,127
MOSFET N-CH 80V 120A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
I2PAK
80 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
120A (Tc)
4mOhm @ 25A, 10V
4V @ 1mA
10V
169 nC @ 10 V
±20V
12030 pF @ 25 V
349W (Tc)
-
BUK9515-60E,127
MOSFET N-CH 60V 54A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
60 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
54A (Tc)
13mOhm @ 15A, 10V
2.1V @ 1mA
5V, 10V
20.5 nC @ 5 V
±10V
2651 pF @ 25 V
96W (Tc)
-
BUK951R6-30E,127
MOSFET N-CH 30V 120A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
30 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
120A (Tc)
1.4mOhm @ 25A, 10V
2.1V @ 1mA
5V, 10V
113 nC @ 5 V
±10V
16150 pF @ 25 V
349W (Tc)
-
BUK951R9-40E,127
MOSFET N-CH 40V 120A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
40 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
120A (Tc)
1.7mOhm @ 25A, 10V
2.1V @ 1mA
5V, 10V
120 nC @ 5 V
±10V
16400 pF @ 25 V
349W (Tc)
-
BUK952R8-60E,127
MOSFET N-CH 60V 120A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
60 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
120A (Tc)
2.6mOhm @ 25A, 10V
2.1V @ 1mA
5V, 10V
120 nC @ 5 V
±10V
17450 pF @ 25 V
349W (Tc)
-
BUK953R2-40E,127
MOSFET N-CH 40V 100A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
40 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
100A (Tc)
2.8mOhm @ 25A, 10V
2.1V @ 1mA
5V, 10V
69.5 nC @ 5 V
±10V
9150 pF @ 25 V
234W (Tc)
-
BUK9E4R4-80E,127
MOSFET N-CH 80V 120A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
I2PAK
80 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
120A (Tc)
4.2mOhm @ 25A, 10V
2.1V @ 1mA
5V, 10V
123 nC @ 5 V
±10V
17130 pF @ 25 V
349W (Tc)
-
BUK9E3R2-40E,127
MOSFET N-CH 40V 100A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
I2PAK
40 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
100A (Tc)
2.8mOhm @ 25A, 10V
2.1V @ 1mA
5V, 10V
69.5 nC @ 5 V
±10V
9150 pF @ 25 V
234W (Tc)
-
BUK9E6R1-100E,127
MOSFET N-CH 100V 120A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
I2PAK
100 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
120A (Tc)
5.9mOhm @ 25A, 10V
2.1V @ 1mA
5V, 10V
133 nC @ 5 V
±10V
17460 pF @ 25 V
349W (Tc)
-
PSMN9R1-30YL,115
NEXPERIA PSMN9R1-30YL - 57A, 30V
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
SC-100, SOT-669
N-Channel
LFPAK56, Power-SO8
30 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
57A (Tc)
9.1mOhm @ 15A, 10V
2.15V @ 1mA
4.5V, 10V
16.7 nC @ 10 V
±20V
894 pF @ 15 V
52W (Tc)
-
IRF640,127
MOSFET N-CH 200V 16A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
200 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
16A (Tc)
180mOhm @ 8A, 10V
4V @ 1mA
10V
63 nC @ 10 V
±20V
1850 pF @ 25 V
136W (Tc)
-
IRF530N,127
MOSFET N-CH 100V 17A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
100 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
17A (Tc)
110mOhm @ 9A, 10V
4V @ 1mA
10V
40 nC @ 10 V
±20V
633 pF @ 25 V
79W (Tc)
-
BUK954R4-80E,127
MOSFET N-CH 80V 120A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
80 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
120A (Tc)
4.2mOhm @ 25A, 10V
2.1V @ 1mA
5V, 10V
123 nC @ 5 V
±10V
17130 pF @ 25 V
349W (Tc)
-
BUK956R1-100E,127
MOSFET N-CH 100V 120A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220AB
100 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
120A (Tc)
5.9mOhm @ 25A, 10V
2.1V @ 1mA
5V, 10V
133 nC @ 5 V
±10V
17460 pF @ 25 V
349W (Tc)
-
BUK9E2R3-40E,127
MOSFET N-CH 40V 120A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
I2PAK
40 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
120A (Tc)
2.2mOhm @ 25A, 10V
2.1V @ 1mA
5V, 10V
87.8 nC @ 5 V
±10V
13160 pF @ 25 V
293W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.