TrenchMOS™ Series, Single FETs, MOSFETs

Results:
1,020
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
Qualification
FET Type
Grade
Mounting Type
Technology
Results remaining1,020
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TrenchMOS™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)Operating TemperatureGradeSeriesTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
BUK9E2R8-60E,127
MOSFET N-CH 60V 120A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK
60 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
120A (Tc)
2.1V @ 1mA
5V, 10V
2.6mOhm @ 25A, 10V
120 nC @ 5 V
±10V
17450 pF @ 25 V
349W (Tc)
-
BUK9E4R9-60E,127
MOSFET N-CH 60V 100A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK
60 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
100A (Tc)
2.1V @ 1mA
5V, 10V
4.5mOhm @ 25A, 10V
65 nC @ 5 V
±10V
9710 pF @ 25 V
234W (Tc)
-
BUK761R5-40EJ
MOSFET N-CH 40V 120A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
40 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
120A (Tc)
4V @ 1mA
10V
1.51mOhm @ 25A, 10V
145 nC @ 10 V
±20V
11340 pF @ 25 V
349W (Tc)
-
BUK7Y25-80E/CX
MOSFET N-CH 80V 39A LFPAK56
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
SC-100, SOT-669
LFPAK56, Power-SO8
80 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
39A (Tc)
4V @ 1mA
10V
25mOhm @ 10A, 10V
25.9 nC @ 10 V
±20V
1800 pF @ 25 V
95W (Tc)
-
BUK7Y25-80E/GFX
MOSFET N-CH 80V 39A LFPAK56
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
SC-100, SOT-669
LFPAK56, Power-SO8
80 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
39A (Tc)
4V @ 1mA
10V
25mOhm @ 10A, 10V
25.9 nC @ 10 V
±20V
1800 pF @ 25 V
95W (Tc)
-
BUK764R0-55B,118
BUK764R0-55B - N-CHANNEL TRENCHM
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
55 V
-55°C ~ 175°C (TJ)
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
75A (Tc)
4V @ 1mA
10V
4mOhm @ 25A, 10V
86 nC @ 10 V
±20V
6776 pF @ 25 V
300W (Tc)
AEC-Q101
IRF540,127
MOSFET N-CH 100V 23A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
100 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
23A (Tc)
4V @ 1mA
10V
77mOhm @ 17A, 10V
65 nC @ 10 V
±20V
1187 pF @ 25 V
100W (Tc)
-
BST72A,112
MOSFET N-CH 100V 190MA TO92-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
100 V
150°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
190mA (Ta)
3.5V @ 1mA
5V
10Ohm @ 150mA, 5V
-
20V
40 pF @ 10 V
830mW (Ta)
-
BUK7511-55A,127
MOSFET N-CH 55V 75A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
55 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
75A (Tc)
4V @ 1mA
10V
11mOhm @ 25A, 10V
-
±20V
3093 pF @ 25 V
166W (Tc)
-
BUK7514-55A,127
MOSFET N-CH 55V 73A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
55 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
73A (Tc)
4V @ 1mA
10V
14mOhm @ 25A, 10V
-
±20V
2464 pF @ 25 V
166W (Tc)
-
BUK7528-55,127
MOSFET N-CH 55V 40A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
55 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
40A (Tc)
4V @ 1mA
10V
28mOhm @ 20A, 10V
-
±16V
1300 pF @ 25 V
96W (Tc)
-
BUK7540-100A,127
MOSFET N-CH 100V 37A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
100 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
37A (Tc)
4V @ 1mA
10V
40mOhm @ 40A, 10V
-
±20V
2293 pF @ 25 V
138W (Tc)
-
BUK7575-55,127
MOSFET N-CH 55V 19.7A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
55 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
19.7A (Tc)
4V @ 1mA
10V
75mOhm @ 10A, 10V
-
±16V
500 pF @ 25 V
61W (Tc)
-
BUK7608-55,118
MOSFET N-CH 55V 75A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
55 V
-55°C ~ 175°C (TJ)
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
75A (Tc)
4V @ 1mA
10V
8mOhm @ 25A, 10V
-
±16V
4500 pF @ 25 V
187W (Tc)
AEC-Q101
BUK7605-30A,118
MOSFET N-CH 30V 75A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
30 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
75A (Tc)
4V @ 1mA
10V
5mOhm @ 25A, 10V
-
±20V
6000 pF @ 25 V
230W (Tc)
-
BUK7615-100A,118
MOSFET N-CH 100V 75A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
100 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
75A (Tc)
4V @ 1mA
10V
15mOhm @ 25A, 10V
-
±20V
6000 pF @ 25 V
230W (Tc)
-
BUK7616-55A,118
MOSFET N-CH 55V 65.7A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
55 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
65.7A (Tc)
4V @ 1mA
10V
16mOhm @ 25A, 10V
-
±20V
2245 pF @ 25 V
138W (Tc)
-
BUK7624-55,118
MOSFET N-CH 55V 45A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
55 V
-55°C ~ 175°C (TJ)
-
TrenchMOS™
MOSFET (Metal Oxide)
-
45A (Tc)
4V @ 1mA
10V
24mOhm @ 25A, 10V
-
±16V
1500 pF @ 25 V
103W (Tc)
-
BUK78150-55A,135
MOSFET N-CH 55V 5.5A SOT223
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-261-4, TO-261AA
SC-73
55 V
-55°C ~ 150°C (TJ)
Automotive
TrenchMOS™
MOSFET (Metal Oxide)
-
5.5A (Tc)
4V @ 1mA
10V
150mOhm @ 5A, 10V
-
±20V
230 pF @ 25 V
8W (Tc)
AEC-Q101
BUK9237-55,118
MOSFET N-CH 55V 32A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
55 V
-
-
TrenchMOS™
MOSFET (Metal Oxide)
-
32A (Tc)
2V @ 1mA
-
33mOhm @ 15A, 10V
17.6 nC @ 5 V
-
1236 pF @ 25 V
-
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.