TrenchFET® Series, Single FETs, MOSFETs

Results:
2,246
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining2,246
Applied Filters:
TrenchFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)GradeSeriesTechnologyFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackagePackage / CaseQualification
SI5415AEDU-T1-GE3
MOSFET P-CH 20V 25A PPAK
1+
$2.5000
5+
$2.3611
10+
$2.2222
Quantity
6,850 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-50°C ~ 150°C (TJ)
P-Channel
20 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
1V @ 250µA
25A (Tc)
1.8V, 4.5V
9.6mOhm @ 10A, 4.5V
120 nC @ 8 V
±8V
4300 pF @ 10 V
3.1W (Ta), 31W (Tc)
PowerPAK® ChipFet Single
PowerPAK® ChipFET™ Single
-
SQD25N15-52_GE3
MOSFET N-CH 150V 25A TO252
1+
$1.3000
5+
$1.2278
10+
$1.1556
Quantity
5,598 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
150 V
Automotive
TrenchFET®
MOSFET (Metal Oxide)
-
4V @ 250µA
25A (Tc)
10V
52mOhm @ 15A, 10V
51 nC @ 10 V
±20V
2200 pF @ 25 V
107W (Tc)
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
AEC-Q101
SQJ431AEP-T1_GE3
MOSFET P-CH 200V 9.4A PPAK SO-8
1+
$1.5000
5+
$1.4167
10+
$1.3333
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
P-Channel
200 V
Automotive
TrenchFET®
MOSFET (Metal Oxide)
-
3.5V @ 250µA
9.4A (Tc)
6V, 10V
305mOhm @ 3.8A, 10V
85 nC @ 10 V
±20V
3700 pF @ 25 V
68W (Tc)
PowerPAK® SO-8
PowerPAK® SO-8
AEC-Q101
SI4431BDY-T1-E3
MOSFET P-CH 30V 5.7A 8SO
1+
$0.5000
5+
$0.4722
10+
$0.4444
Quantity
2,842 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
3V @ 250µA
5.7A (Ta)
4.5V, 10V
30mOhm @ 7.5A, 10V
20 nC @ 5 V
±20V
-
1.5W (Ta)
8-SOIC
8-SOIC (0.154", 3.90mm Width)
-
SQ3427EEV-T1-GE3
MOSFET P-CH 60V 5.5A 6TSOP
1+
$0.7500
5+
$0.7083
10+
$0.6667
Quantity
1,594 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
P-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
2.5V @ 250µA
5.5A (Tc)
4.5V, 10V
82mOhm @ 4.5A, 10V
32 nC @ 10 V
±20V
1125 pF @ 30 V
5W (Tc)
6-TSOP
SOT-23-6 Thin, TSOT-23-6
-
SI3455ADV-T1-E3
MOSFET P-CH 30V 2.7A 6TSOP
1+
$2.5000
5+
$2.3611
10+
$2.2222
Quantity
1,571 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
3V @ 250µA
2.7A (Ta)
4.5V, 10V
100mOhm @ 3.5A, 10V
13 nC @ 10 V
±20V
-
1.14W (Ta)
6-TSOP
SOT-23-6 Thin, TSOT-23-6
-
SUD45P03-09-GE3
MOSFET P-CH 30V 45A TO252
1+
$2.0000
5+
$1.8889
10+
$1.7778
Quantity
1,233 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
2.5V @ 250µA
45A (Tc)
4.5V, 10V
8.7mOhm @ 20A, 10V
90 nC @ 10 V
±20V
2700 pF @ 15 V
2.1W (Ta), 41.7W (Tc)
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
-
SI4451DY-T1-E3
MOSFET P-CH 12V 10A 8SO
1+
$0.3750
5+
$0.3542
10+
$0.3333
Quantity
776 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
12 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
800mV @ 850µA
10A (Ta)
1.8V, 4.5V
8.25mOhm @ 14A, 4.5V
120 nC @ 4.5 V
±8V
-
1.5W (Ta)
8-SOIC
8-SOIC (0.154", 3.90mm Width)
-
SIR872DP-T1-GE3
MOSFET N-CH 150V 53.7A PPAK SO-8
1+
$5.0000
5+
$4.7222
10+
$4.4444
Quantity
70 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
150 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
3.5V @ 250µA
53.7A (Tc)
10V
18mOhm @ 20A, 10V
64 nC @ 10 V
±20V
2130 pF @ 75 V
6.25W (Ta), 104W (Tc)
PowerPAK® SO-8
PowerPAK® SO-8
-
SI7409ADN-T1-GE3
MOSFET P-CH 30V 7A PPAK 1212-8
1+
$30.0000
5+
$28.3333
10+
$26.6667
Quantity
41 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
1.5V @ 250µA
7A (Ta)
2.5V, 4.5V
19mOhm @ 11A, 4.5V
40 nC @ 4.5 V
±12V
-
1.5W (Ta)
PowerPAK® 1212-8
PowerPAK® 1212-8
-
SUD25N15-52-T4-E3
MOSFET N-CH 150V 25A TO252
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
150 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
4V @ 250µA
25A (Tc)
6V, 10V
52mOhm @ 5A, 10V
40 nC @ 10 V
±20V
1725 pF @ 25 V
3W (Ta), 136W (Tc)
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
-
SI9410BDY-T1-E3
MOSFET N-CH 30V 6.2A 8SO
1+
$1.2500
5+
$1.1806
10+
$1.1111
Quantity
256 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
3V @ 250µA
6.2A (Ta)
4.5V, 10V
24mOhm @ 8.1A, 10V
23 nC @ 10 V
±20V
-
1.5W (Ta)
8-SOIC
8-SOIC (0.154", 3.90mm Width)
-
SIR644DP-T1-GE3
MOSFET N-CH 40V 60A PPAK SO-8
1+
$15.0000
5+
$14.1667
10+
$13.3333
Quantity
824 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
40 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
2.2V @ 250µA
60A (Tc)
4.5V, 10V
2.7mOhm @ 20A, 10V
71 nC @ 10 V
±20V
3200 pF @ 20 V
5.2W (Ta), 69W (Tc)
PowerPAK® SO-8
PowerPAK® SO-8
-
SIS439DNT-T1-GE3
MOSFET P-CH 30V 50A PPAK1212-8S
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-50°C ~ 150°C (TJ)
P-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
2.8V @ 250µA
50A (Tc)
4.5V, 10V
11mOhm @ 14A, 10V
68 nC @ 10 V
±20V
2135 pF @ 15 V
3.8W (Ta), 52.1W (Tc)
PowerPAK® 1212-8S
PowerPAK® 1212-8S
-
SIR812DP-T1-GE3
MOSFET N-CH 30V 60A PPAK SO-8
1+
$1.7500
5+
$1.6528
10+
$1.5556
Quantity
2,012 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
2.3V @ 250µA
60A (Tc)
4.5V, 10V
1.45mOhm @ 20A, 10V
335 nC @ 10 V
±20V
10240 pF @ 15 V
6.25W (Ta), 104W (Tc)
PowerPAK® SO-8
PowerPAK® SO-8
-
SIR864DP-T1-GE3
MOSFET N-CH 30V 40A PPAK SO-8
1+
$3.7500
5+
$3.5417
10+
$3.3333
Quantity
1,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
2.4V @ 250µA
40A (Tc)
4.5V, 10V
3.6mOhm @ 15A, 10V
65 nC @ 10 V
±20V
2460 pF @ 15 V
5W (Ta), 54W (Tc)
PowerPAK® SO-8
PowerPAK® SO-8
-
SIRA34DP-T1-GE3
MOSFET N-CH 30V 40A PPAK SO-8
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
2.4V @ 250µA
40A (Tc)
4.5V, 10V
6.7mOhm @ 10A, 10V
25 nC @ 10 V
+20V, -16V
1100 pF @ 15 V
3.3W (Ta), 31.25W (Tc)
PowerPAK® SO-8
PowerPAK® SO-8
-
SIR330DP-T1-GE3
MOSFET N-CH 30V 35A PPAK SO-8
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
2.5V @ 250µA
35A (Tc)
4.5V, 10V
5.6mOhm @ 10A, 10V
35 nC @ 10 V
±20V
1300 pF @ 15 V
5W (Ta), 27.7W (Tc)
PowerPAK® SO-8
PowerPAK® SO-8
-
SUP50N10-21P-GE3
MOSFET N-CH 100V 50A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
100 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
4V @ 250µA
50A (Tc)
6V, 10V
21mOhm @ 10A, 10V
68 nC @ 10 V
±20V
2055 pF @ 50 V
3.1W (Ta), 125W (Tc)
TO-220AB
TO-220-3
-
SIB437EDKT-T1-GE3
MOSFET P-CH 8V 9A PPAK TSC75-6
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
700mV @ 250µA
9A (Tc)
1.2V, 4.5V
34mOhm @ 3A, 4.5V
16 nC @ 4.5 V
±5V
-
2.4W (Ta), 13W (Tc)
PowerPAK® TSC75-6
PowerPAK® TSC-75-6
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.