TrenchFET® Series, Single FETs, MOSFETs

Results:
2,246
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining2,246
Applied Filters:
TrenchFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeDrain to Source Voltage (Vdss)GradeSeriesTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Power Dissipation (Max)QualificationInput Capacitance (Ciss) (Max) @ Vds
G230P06S
P-60V,-8A,RD(MAX)<23M@-10V,VTH-2
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOP
P-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
9A (Tc)
4V @ 250µA
10V
23mOhm @ 5A, 10V
62 nC @ 10 V
±20V
3W (Tc)
-
4784 pF @ 30 V
630A
N200V,RD(MAX)<280M@10V,VTH1V~3V,
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
N-Channel
200 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
11A (Tc)
3V @ 250µA
10V
280mOhm @ 4.5A, 10V
11.8 nC @ 10 V
±20V
83W (Tc)
-
509 pF @ 25 V
G80N03K
N30V, 80A,RD<6.5M@10V,VTH1.0V~2.
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
N-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
80A (Tc)
2V @ 250µA
4.5V, 10V
6.5mOhm @ 25A, 10V
42 nC @ 10 V
±20V
69W (Tc)
-
1950 pF @ 15 V
GT090N06K
MOSFET, N-CH, 60V,45A,TO-252
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
N-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
45A (Tc)
2.4V @ 250µA
4.5V, 10V
9mOhm @ 14A, 10V
22 nC @ 10 V
±20V
52W (Tc)
-
1088 pF @ 30 V
18N20
N 200V, RD(MAX)<0.16@10V,VTH1.0V
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
N-Channel
200 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
18A (Tc)
3V @ 250µA
10V
190mOhm @ 9A, 10V
17.7 nC @ 10 V
±30V
65.8W (Tc)
-
836 pF @ 25 V
G65P06K
P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
P-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
65A (Tc)
3.5V @ 250µA
10V
18mOhm @ 20A, 10V
75 nC @ 10 V
±20V
125W (Tc)
-
5814 pF @ 25 V
G400P06S
MOSFET, P-CH, 60V,6A,SOP-8
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOP
P-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
6A (Tc)
3V @ 250µA
10V
40mOhm @ 12A, 10V
46 nC @ 10 V
±20V
1.7W (Tc)
-
2506 pF @ 30 V
G40P03K
P-30V,RD(MAX)<9.5M@-10V,RD(MAX)<
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
P-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
40A (Tc)
2.5V @ 250µA
4.5V, 10V
9.5mOhm @ 15A, 10V
30 nC @ 10 V
±20V
138W (Tc)
-
-
G110N06K
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
N-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
110A (Tc)
2.5V @ 250µA
4.5V, 10V
6.4mOhm @ 4A, 10V
113 nC @ 10 V
±20V
160W (Tc)
-
5538 pF @ 25 V
G07P04S
P40V,RD(MAX)<18M@-10V,RD(MAX)<22
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOP
P-Channel
40 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
7A (Tc)
2.5V @ 250µA
4.5V, 10V
18mOhm @ 7A, 10V
24 nC @ 10 V
±20V
2.5W (Tc)
-
1750 pF @ 20 V
G16P03S
P30V,RD(MAX)<12M@-10V,RD(MAX)<18
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOP
P-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
16A (Tc)
2.5V @ 250µA
4.5V, 10V
12mOhm @ 10A, 10V
35 nC @ 10 V
±20V
3W (Tc)
-
2800 pF @ 15 V
G50N03J
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-251-3 Stub Leads, IPak
TO-251
N-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
65A (Tc)
2.5V @ 250µA
4.5V, 10V
7mOhm @ 20A, 10V
16.6 nC @ 10 V
±20V
48W (Tc)
-
1255 pF @ 15 V
G45P02D3
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
8-DFN (3.15x3.05)
P-Channel
20 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
45A (Tc)
1V @ 250µA
2.5V, 4.5V
9.5mOhm @ 10A, 4.5V
55 nC @ 4.5 V
±12V
29W (Tc)
-
3500 pF @ 10 V
G08P06D3
P60V,RD(MAX)<52M@-10V,VTH-2V~-3.
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
8-DFN (3.15x3.05)
P-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
8A (Tc)
3.5V @ 250µA
10V
52mOhm @ 6A, 10V
25 nC @ 10 V
±20V
32W (Tc)
-
2972 pF @ 30 V
G58N06K
N60V,58A,RD<13M@10V,VTH1.0V~2.5V
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
N-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
58A (Tc)
2.5V @ 250µA
4.5V, 10V
13mOhm @ 30A, 10V
36 nC @ 10 V
±20V
71W (Tc)
-
2841 pF @ 30 V
G33N03D52
N30V, 33A,RD<13M@10V,VTH1V~3V, D
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
DFN5*6
DFN5*6
N-Channel
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
33A (Tc)
3V @ 250µA
4.5V, 10V
13mOhm @ 16A, 10V
17.5 nC @ 10 V
±20V
29W (Tc)
-
782 pF @ 15 V
G30N04D3
MOSFET N-CH 40V 30A DFN33-8L
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
8-DFN (3.15x3.05)
N-Channel
40 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
30A (Tc)
2.5V @ 250µA
4.5V, 10V
9.5mOhm @ 20A, 10V
30 nC @ 10 V
±20V
19.8W (Tc)
-
1780 pF @ 20 V
G20P06K
P-60V, -20A,RD<45M@-10V,VTH-2V~-
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
P-Channel
60 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
20A (Tc)
3.5V @ 250µA
10V
45mOhm @ 12A, 10V
46 nC @ 10 V
±20V
90W (Tc)
-
3430 pF @ 30 V
45P40
P40V,RD(MAX)<14M@-10V,VTH2V~3V T
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
P-Channel
40 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
45A (Tc)
2.5V @ 250µA
10V
14mOhm @ 20A, 10V
42 nC @ 10 V
±20V
80W (Tc)
-
2960 pF @ 20 V
G2002A
N200V, 2A,RD<540M@10V,VTH1.0V~3.
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-6
SOT-23-6L
N-Channel
200 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2A (Tc)
3V @ 250µA
4.5V, 10V
540mOhm @ 1A, 10V
16 nC @ 10 V
±20V
2.5W (Tc)
-
733 pF @ 100 V

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.