TrenchFET® Series, Single FETs, MOSFETs

Results:
2,246
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining2,246
Applied Filters:
TrenchFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseFET TypeDrain to Source Voltage (Vdss)GradeSupplier Device PackageSeriesTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
G1K1P06LL
P-60V,-4A,RD(MAX)<110M@-10V,VTH-
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-6
P-Channel
60 V
-
SOT-23-6L
TrenchFET®
MOSFET (Metal Oxide)
Standard
3A (Tc)
110mOhm @ 2A, 10V
2.5V @ 250µA
4.5V, 10V
25 nC @ 10 V
±20V
1035 pF @ 30 V
1.5W (Tc)
-
G20N03D2
N30V,RD(MAX)<24M@10V,RD(MAX)<29M
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-WDFN Exposed Pad
N-Channel
30 V
-
6-DFN (2x2)
TrenchFET®
MOSFET (Metal Oxide)
Standard
9A (Tc)
15mOhm @ 5A, 10V
2V @ 250µA
4.5V, 10V
20 nC @ 10 V
±20V
873 pF @ 30 V
1.5W (Tc)
-
G05P06L
P60V,RD(MAX)<120M@-10V,RD(MAX)<1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
P-Channel
60 V
-
SOT-23-3
TrenchFET®
MOSFET (Metal Oxide)
Standard
5A (Tc)
80mOhm @ 4A, 10V
2.5V @ 250µA
4.5V, 10V
37 nC @ 10 V
±20V
1366 pF @ 50 V
2.6W (Tc)
-
G33N03S
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
N-Channel
30 V
-
8-SOP
TrenchFET®
MOSFET (Metal Oxide)
Standard
13A (Tc)
12mOhm @ 8A, 10V
1.1V @ 250µA
4.5V, 10V
13 nC @ 5 V
±20V
1550 pF @ 15 V
2.5W (Tc)
-
G10N03S
N30V,RD(MAX)<12M@10V,RD(MAX)<16M
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
N-Channel
30 V
-
8-SOP
TrenchFET®
MOSFET (Metal Oxide)
Standard
10A (Tc)
12mOhm @ 6A, 10V
2.5V @ 250µA
4.5V, 10V
17 nC @ 4.5 V
±20V
839 pF @ 15 V
2.5W (Tc)
-
G7P03S
P30V,RD(MAX)<22M@-10V,RD(MAX)<33
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
P-Channel
30 V
-
8-SOP
TrenchFET®
MOSFET (Metal Oxide)
Standard
9A (Tc)
22mOhm @ 3A, 10V
2V @ 250µA
4.5V, 10V
24.5 nC @ 10 V
±20V
1253 pF @ 15 V
2.7W (Tc)
-
G2012
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-WDFN Exposed Pad
N-Channel
20 V
-
6-DFN (2x2)
TrenchFET®
MOSFET (Metal Oxide)
Standard
12A (Tc)
12mOhm @ 5A, 4.5V
1V @ 250µA
2.5V, 4.5V
29 nC @ 10 V
±10V
1255 pF @ 10 V
1.5W (Tc)
-
G3035L
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
P-Channel
30 V
-
SOT-23-3
TrenchFET®
MOSFET (Metal Oxide)
-
4.1A (Ta)
59mOhm @ 2.1A, 10V
2V @ 250µA
4.5V, 10V
12.5 nC @ 10 V
±20V
650 pF @ 15 V
1.4W (Ta)
-
G11S
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
P-Channel
20 V
-
8-SOP
TrenchFET®
MOSFET (Metal Oxide)
Standard
11A (Tc)
18.4mOhm @ 1A, 4.5V
1.1V @ 250µA
2.5V, 4.5V
47 nC @ 10 V
±12V
2455 pF @ 10 V
3.3W (Tc)
-
G01N20LE
N200V,RD(MAX)<850M@10V,RD(MAX)<9
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
200 V
-
SOT-23-3
TrenchFET®
MOSFET (Metal Oxide)
Standard
1.7A (Tc)
700mOhm @ 1A, 10V
2.5V @ 250µA
4.5V, 10V
12 nC @ 10 V
±20V
580 pF @ 25 V
1.5W (Tc)
-
G2014
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-WDFN Exposed Pad
N-Channel
20 V
-
6-DFN (2x2)
TrenchFET®
MOSFET (Metal Oxide)
Standard
14A (Tc)
7mOhm @ 5A, 10V
900mV @ 250µA
2.5V, 10V
17.5 nC @ 4.5 V
±12V
1710 pF @ 10 V
3W (Tc)
-
G3035
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
P-Channel
30 V
-
SOT-23
TrenchFET®
MOSFET (Metal Oxide)
Standard
4.6A (Tc)
59mOhm @ 4A, 10V
2V @ 250µA
4.5V, 10V
13 nC @ 10 V
±20V
650 pF @ 15 V
1.4W (Tc)
-
03N06
N60V,RD(MAX)<100M@10V,RD(MAX)<12
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
60 V
-
SOT-23
TrenchFET®
MOSFET (Metal Oxide)
Standard
3A (Tc)
100mOhm @ 2A, 10V
1.2V @ 250µA
4.5V, 10V
14.6 nC @ 30 V
±20V
510 pF @ 30 V
1.7W (Tc)
-
G2312
N20V,RD(MAX)<18M@10V,RD(MAX)<20M
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
20 V
-
SOT-23
TrenchFET®
MOSFET (Metal Oxide)
Standard
5A (Tc)
18mOhm @ 4.2A, 10V
1V @ 250µA
4.5V, 10V
11 nC @ 4.5 V
±12V
780 pF @ 10 V
1.25W (Tc)
-
G86N06K
N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
60 V
-
TO-252 (DPAK)
TrenchFET®
MOSFET (Metal Oxide)
Standard
80A (Tc)
8mOhm @ 4A, 10V
4V @ 250µA
10V
77 nC @ 10 V
±20V
2860 pF @ 25 V
110W (Tc)
-
3400L
N30V,RD(MAX)<27M@10V,RD(MAX)<33M
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
30 V
-
SOT-23-3L
TrenchFET®
MOSFET (Metal Oxide)
Standard
5.6A (Tc)
59mOhm @ 2.8A, 2.5V
1.4V @ 250µA
4.5V, 10V
9.5 nC @ 4.5 V
±12V
820 pF @ 15 V
1.4W (Tc)
-
G3404LL
N30V,RD(MAX)<22M@10V,RD(MAX)<35M
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-6
N-Channel
30 V
-
SOT-23-6L
TrenchFET®
MOSFET (Metal Oxide)
Standard
6A (Tc)
22mOhm @ 4.2A, 10V
2V @ 250µA
4.5V, 10V
12.2 nC @ 10 V
±20V
541 pF @ 15 V
1.2W (Tc)
-
G3401L
P30V,RD(MAX)<60M@-10V,RD(MAX)<70
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
P-Channel
30 V
-
SOT-23-3
TrenchFET®
MOSFET (Metal Oxide)
Standard
4.4A (Tc)
55mOhm @ 4A, 10V
1.3V @ 250µA
2.5V, 4.5V, 10V
8.5 nC @ 4.5 V
±12V
880 pF @ 15 V
1.3W (Tc)
-
G1002L
N100V,RD(MAX)<250M@10V,VTH1.2V~2
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
100 V
-
SOT-23-3L
TrenchFET®
MOSFET (Metal Oxide)
Standard
2A (Tc)
250mOhm @ 2A, 10V
2V @ 250µA
4.5V, 10V
10 nC @ 10 V
±20V
413 pF @ 50 V
1.3W (Tc)
-
G2K3N10H
MOSFET, N-CH,100V, 2A,SOT-223
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-261-4, TO-261AA
N-Channel
100 V
-
SOT-223
TrenchFET®
MOSFET (Metal Oxide)
Standard
2A (Tc)
220mOhm @ 2A, 10V
2V @ 250µA
4.5V, 10V
13 nC @ 10 V
±20V
434 pF @ 50 V
2.4W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.