TrenchFET® Series, Single FETs, MOSFETs

Results:
2,246
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining2,246
Applied Filters:
TrenchFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseDrain to Source Voltage (Vdss)GradeSeriesTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualificationRds On (Max) @ Id, Vgs
G10P03
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8-PowerVDFN
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
10A (Tc)
1.5V @ 250µA
2.5V, 4.5V
27 nC @ 4.5 V
±12V
1550 pF @ 15 V
20W (Tc)
8-DFN (3.15x3.05)
-
26mOhm @ 10A, 4.5V
G36N03K
N30V,36A,RD<8.5M@10V,VTH1.0V~2.2
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
36A (Tc)
2.2V @ 250µA
4.5V, 10V
14 nC @ 10 V
±20V
1040 pF @ 15 V
31W (Tc)
TO-252
-
8.5mOhm @ 20A, 10V
G16N03S
N30V, 16A,RD<10M@10V,VTH1.0V~2.5
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-SOIC (0.154", 3.90mm Width)
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
16A (Tc)
2.5V @ 250µA
5V, 10V
16.6 nC @ 10 V
±20V
950 pF @ 15 V
2.5W (Tc)
8-SOP
-
10mOhm @ 10A, 10V
G30N03D3
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerVDFN
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
30A (Tc)
2.5V @ 250µA
4.5V, 10V
13 nC @ 10 V
±20V
825 pF @ 15 V
24W (Tc)
8-DFN (3.15x3.05)
-
7mOhm @ 20A, 10V
G12P04K
P40V,RD(MAX)<35M@-10V,RD(MAX)<45
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
12A (Tc)
2.5V @ 250µA
4.5V, 10V
25 nC @ 10 V
±20V
930 pF @ 20 V
50W (Tc)
TO-252
-
35mOhm @ 6A, 10V
G2K2P10SE
P-100V, 3.5A,RD<200M@-10V,VTH1V~
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8-SOIC (0.154", 3.90mm Width)
100 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3.5A (Tc)
2.5V @ 250µA
4.5V, 10V
23 nC @ 10 V
±20V
1653 pF @ 50 V
3.1W (Tc)
8-SOP
-
200mOhm @ 3A, 10V
G100N03D5
N-CH, 30V, 100A, RD(MAX)<3.5M@10
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
100A (Tc)
2.5V @ 250µA
4.5V, 10V
38 nC @ 10 V
±20V
5595 pF @ 50 V
50W (Tc)
8-DFN (4.9x5.75)
-
3.5mOhm @ 20A, 10V
G75P04K
P40V,RD(MAX)<10M@-10V,VTH-1.2V~-
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
70A (Tc)
2.5V @ 250µA
10V
106 nC @ 10 V
±20V
5380 pF @ 20 V
130W (Tc)
TO-252
-
10mOhm @ 10A, 20V
G2003A
N190V, 3A,RD<540M@10V,VTH1.0V~3.
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
190 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3A (Tc)
3V @ 250µA
4.5V, 10V
12 nC @ 10 V
±20V
580 pF @ 25 V
1.8W (Tc)
SOT-23-3
-
540mOhm @ 2A, 10V
G2K3N10G
N100V, 2.5A,RD<220M@10V,VTH1V~2V
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-243AA
100 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
2.5A (Tc)
2V @ 250µA
4.5V, 10V
13 nC @ 10 V
±20V
436 pF @ 50 V
1.5W (Tc)
SOT-89
-
220mOhm @ 2A, 10V
G75P04T
MOSFET P-CH 40V 70A TO-220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
P-Channel
TO-220-3
-
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
70A (Tc)
2.5V @ 250µA
4.5V, 10V
-
±20V
-
277W (Tc)
TO-220
-
7mOhm @ 20A, 10V
G12P10KE
P-100V,ESD,-12A,RD(MAX)<200M@-10
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
100 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
12A (Tc)
3V @ 250µA
4.5V, 10V
33 nC @ 10 V
±20V
1720 pF @ 50 V
57W (Tc)
TO-252
-
200mOhm @ 6A, 10V
2301
MOSFET P-CH 20V 3A SOT-23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
-
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3A (Tc)
900mV @ 250µA
2.5V, 4.5V
-
±10V
-
1W (Tc)
SOT-23
-
56mOhm @ 1.7A, 4.5V
2301
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
20 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
3A (Tc)
900mV @ 250µA
2.5V, 4.5V
12 nC @ 2.5 V
±10V
405 pF @ 10 V
1W (Tc)
SOT-23
-
56mOhm @ 1.7A, 4.5V
2302
MOSFET N-CH 20V 4.3A SOT-23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
20 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
4.3A (Tc)
1.1V @ 250µA
2.5V, 4.5V
10 nC @ 4.5 V
±10V
300 pF @ 10 V
1W (Tc)
SOT-23-3
-
27mOhm @ 2.2A, 4.5V
3400
MOSFET N-CH 30V 5.6A SOT-23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
-
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
5.6A (Tc)
1.4V @ 250µA
4.5V, 10V
-
±12V
-
1.4W (Tc)
SOT-23
-
59mOhm @ 2.8A, 2.5V
3400
N30V,RD(MAX)<27M@10V,RD(MAX)<33M
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
5.6A (Tc)
1.4V @ 250µA
4.5V, 10V
9.5 nC @ 4.5 V
±12V
820 pF @ 15 V
1.4W (Tc)
SOT-23
-
59mOhm @ 2.8A, 2.5V
3401
MOSFET P-CH 30V 4.2A SOT-23
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
4.2A (Tc)
1.3V @ 250µA
4.5V, 10V
9.5 nC @ 4.5 V
±12V
950 pF @ 15 V
1.2W (Tc)
SOT-23-3
-
55mOhm @ 4A, 10V
4435
MOSFET P-CH 30V 11A SOP-8
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8-SOIC (0.154", 3.90mm Width)
-
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
11A (Tc)
2.5V @ 250µA
4.5V, 10V
-
±20V
-
2.5W (Tc)
8-SOP
-
20mOhm @ 10A, 10V
4435
P30V,RD(MAX)<20M@-10V,RD(MAX)<33
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8-SOIC (0.154", 3.90mm Width)
30 V
-
TrenchFET®
MOSFET (Metal Oxide)
Standard
11A (Tc)
2.5V @ 250µA
4.5V, 10V
40 nC @ 10 V
±20V
2270 pF @ 15 V
2.5W (Tc)
8-SOP
-
20mOhm @ 10A, 10V

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.