TrenchFET® Series, Single FETs, MOSFETs

Results:
2,246
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining2,246
Applied Filters:
TrenchFET®
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeDrain to Source Voltage (Vdss)Input Capacitance (Ciss) (Max) @ VdsGradeSeriesTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Power Dissipation (Max)Qualification
SI2302CDS-T1-GE3
MOSFET N-CH 20V 2.6A SOT23-3
1+
$0.0625
5+
$0.0590
10+
$0.0556
Quantity
150,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
N-Channel
20 V
-
-
TrenchFET®
MOSFET (Metal Oxide)
-
2.6A (Ta)
57mOhm @ 3.6A, 4.5V
850mV @ 250µA
2.5V, 4.5V
5.5 nC @ 4.5 V
±8V
710mW (Ta)
-
SI1013R-T1-GE3
MOSFET P-CH 20V 350MA SC75A
1+
$0.2000
5+
$0.1889
10+
$0.1778
Quantity
109,674 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SC-75, SOT-416
SC-75A
P-Channel
20 V
-
-
TrenchFET®
MOSFET (Metal Oxide)
-
350mA (Ta)
1.2Ohm @ 350mA, 4.5V
450mV @ 250µA (Min)
1.8V, 4.5V
1.5 nC @ 4.5 V
±6V
150mW (Ta)
-
SUD50P06-15-GE3
MOSFET P-CH 60V 50A TO252
1+
$1.2500
5+
$1.1806
10+
$1.1111
Quantity
74,918 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
P-Channel
60 V
4950 pF @ 25 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
50A (Tc)
15mOhm @ 17A, 10V
3V @ 250µA
4.5V, 10V
165 nC @ 10 V
±20V
2.5W (Ta), 113W (Tc)
-
SI7149ADP-T1-GE3
MOSFET P-CH 30V 50A PPAK SO-8
1+
$0.4500
5+
$0.4250
10+
$0.4000
Quantity
67,038 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SO-8
PowerPAK® SO-8
P-Channel
30 V
5125 pF @ 15 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
50A (Tc)
5.2mOhm @ 15A, 10V
2.5V @ 250µA
4.5V, 10V
135 nC @ 10 V
±25V
5W (Ta), 48W (Tc)
-
SUD50P08-25L-E3
MOSFET P-CH 80V 50A TO252
1+
$1.2500
5+
$1.1806
10+
$1.1111
Quantity
66,092 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
P-Channel
80 V
4700 pF @ 40 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
50A (Tc)
25.2mOhm @ 12.5A, 10V
3V @ 250µA
4.5V, 10V
160 nC @ 10 V
±20V
8.3W (Ta), 136W (Tc)
-
SI4880DY-T1-E3
MOSFET N-CH 30V 13A 8-SOIC
1+
$0.2500
5+
$0.2361
10+
$0.2222
Quantity
48,497 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
-
-
TrenchFET®
MOSFET (Metal Oxide)
-
13A (Ta)
8.5mOhm @ 13A, 10V
1.8V @ 250µA
4.5V, 10V
25 nC @ 5 V
±25V
2.5W (Ta)
-
SI4447ADY-T1-GE3
MOSFET P-CH 40V 7.2A 8SO
1+
$0.3375
5+
$0.3188
10+
$0.3000
Quantity
46,300 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
P-Channel
40 V
970 pF @ 20 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
7.2A (Tc)
45mOhm @ 5A, 10V
2.5V @ 250µA
4.5V, 10V
38 nC @ 10 V
±20V
4.2W (Tc)
-
SQ2398ES-T1_GE3
MOSFET N-CH 100V 1.6A SOT23-3
1+
$0.2750
5+
$0.2597
10+
$0.2444
Quantity
33,307 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
N-Channel
100 V
152 pF @ 50 V
Automotive
TrenchFET®
MOSFET (Metal Oxide)
-
1.6A (Tc)
300mOhm @ 1.5A, 10V
3.5V @ 250µA
10V
3.4 nC @ 10 V
±20V
2W (Tc)
AEC-Q101
SI7456DDP-T1-GE3
MOSFET N-CH 100V 27.8A PPAK SO-8
1+
$1.2500
5+
$1.1806
10+
$1.1111
Quantity
32,579 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SO-8
PowerPAK® SO-8
N-Channel
100 V
900 pF @ 50 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
27.8A (Tc)
23mOhm @ 10A, 10V
2.8V @ 250µA
4.5V, 10V
29.5 nC @ 10 V
±20V
5W (Ta), 35.7W (Tc)
-
SI7113DN-T1-E3
MOSFET P-CH 100V 13.2A PPAK
1+
$1.2500
5+
$1.1806
10+
$1.1111
Quantity
30,149 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-50°C ~ 150°C (TJ)
PowerPAK® 1212-8
PowerPAK® 1212-8
P-Channel
100 V
1480 pF @ 50 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
13.2A (Tc)
134mOhm @ 4A, 10V
3V @ 250µA
4.5V, 10V
55 nC @ 10 V
±20V
3.7W (Ta), 52W (Tc)
-
SI2366DS-T1-GE3
MOSFET N-CH 30V 5.8A SOT23-3
1+
$0.3750
5+
$0.3542
10+
$0.3333
Quantity
24,408 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
N-Channel
30 V
335 pF @ 15 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
5.8A (Tc)
36mOhm @ 4.5A, 10V
2.5V @ 250µA
10V
10 nC @ 10 V
±20V
1.25W (Ta), 2.1W (Tc)
-
SI3433CDV-T1-GE3
MOSFET P-CH 20V 6A 6TSOP
1+
$0.1625
5+
$0.1535
10+
$0.1444
Quantity
22,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-6 Thin, TSOT-23-6
6-TSOP
P-Channel
20 V
1300 pF @ 10 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
6A (Tc)
38mOhm @ 5.2A, 4.5V
1V @ 250µA
1.8V, 4.5V
45 nC @ 8 V
±8V
1.6W (Ta), 3.3W (Tc)
-
SI1013R-T1-E3
MOSFET P-CH 20V 350MA SC75A
1+
$0.1250
5+
$0.1181
10+
$0.1111
Quantity
20,569 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SC-75, SOT-416
SC-75A
P-Channel
20 V
-
-
TrenchFET®
MOSFET (Metal Oxide)
-
350mA (Ta)
1.2Ohm @ 350mA, 4.5V
450mV @ 250µA (Min)
1.8V, 4.5V
1.5 nC @ 4.5 V
±6V
150mW (Ta)
-
SUM110P06-07L-E3
MOSFET P-CH 60V 110A TO263
1+
$2.4000
5+
$2.2667
10+
$2.1333
Quantity
15,200 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
P-Channel
60 V
11400 pF @ 25 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
110A (Tc)
6.9mOhm @ 30A, 10V
3V @ 250µA
4.5V, 10V
345 nC @ 10 V
±20V
3.75W (Ta), 375W (Tc)
-
SQ2361ES-T1_GE3
MOSFET P-CH 60V 2.8A SSOT23
1+
$0.2750
5+
$0.2597
10+
$0.2444
Quantity
15,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-236-3, SC-59, SOT-23-3
-
P-Channel
60 V
550 pF @ 30 V
Automotive
TrenchFET®
MOSFET (Metal Oxide)
-
2.8A (Tc)
177mOhm @ 2.4A, 10V
2.5V @ 250µA
10V
12 nC @ 10 V
±20V
2W (Tc)
AEC-Q101
SUD25N15-52-E3
MOSFET N-CH 150V 25A TO252
1+
$1.2500
5+
$1.1806
10+
$1.1111
Quantity
14,006 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
N-Channel
150 V
1725 pF @ 25 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
25A (Tc)
52mOhm @ 5A, 10V
4V @ 250µA
6V, 10V
40 nC @ 10 V
±20V
3W (Ta), 136W (Tc)
-
SQP100P06-9M3L_GE3
MOSFET P-CH 60V 100A TO220AB
1+
$12.5000
5+
$11.8056
10+
$11.1111
Quantity
11,926 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-220-3
TO-220AB
P-Channel
60 V
12010 pF @ 25 V
Automotive
TrenchFET®
MOSFET (Metal Oxide)
-
100A (Tc)
9.3mOhm @ 30A, 10V
2.5V @ 250µA
4.5V, 10V
300 nC @ 10 V
±20V
187W (Tc)
AEC-Q101
SI7489DP-T1-E3
MOSFET P-CH 100V 28A PPAK SO-8
1+
$1.5750
5+
$1.4875
10+
$1.4000
Quantity
9,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SO-8
PowerPAK® SO-8
P-Channel
100 V
4600 pF @ 50 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
28A (Tc)
41mOhm @ 7.8A, 10V
3V @ 250µA
4.5V, 10V
160 nC @ 10 V
±20V
5.2W (Ta), 83W (Tc)
-
SIR688DP-T1-GE3
MOSFET N-CH 60V 60A PPAK SO-8
1+
$5.0000
5+
$4.7222
10+
$4.4444
Quantity
8,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SO-8
PowerPAK® SO-8
N-Channel
60 V
3105 pF @ 30 V
-
TrenchFET®
MOSFET (Metal Oxide)
-
60A (Tc)
3.5mOhm @ 20A, 10V
2.7V @ 250µA
4.5V, 10V
66 nC @ 10 V
±20V
5.4W (Ta), 83W (Tc)
-
SQ9407EY-T1_GE3
MOSFET P-CHANNEL 60V 4.6A 8SO
1+
$1.0000
5+
$0.9444
10+
$0.8889
Quantity
6,900 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TA)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
P-Channel
60 V
1140 pF @ 30 V
Automotive
TrenchFET®
MOSFET (Metal Oxide)
-
4.6A (Tc)
85mOhm @ 3.5A, 10V
2.5V @ 250µA
4.5V, 10V
40 nC @ 10 V
±20V
3.75W (Tc)
AEC-Q101

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.