Single FETs, MOSFETs

Results:
44,485
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Drain to Source Voltage (Vdss)
Operating Temperature
Qualification
Power - Max
FET Feature
Technology
Configuration
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Voltage - Cutoff (VGS off) @ Id
Frequency - Transition
Current - Collector (Ic) (Max)
Grade
Current - Drain (Idss) @ Vds (Vgs=0)
FET Type
Current Rating (Amps)
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Voltage - Rated
Transistor Type
Current - Test
Gain
Power - Output
Input Type
Number of Outputs
Voltage - Test
Frequency
Voltage - Breakdown (V(BR)GSS)
Cable Opening
Voltage Rating
Shell Size, MIL
Resistance - RDS(On)
Gate Type
Material Flammability Rating
Current - Output (Max)
Voltage - Supply
Channel Type
High Side Voltage - Max (Bootstrap)
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Operating Temperature - Junction
Logic Voltage - VIL, VIH
Driven Configuration
Capacitance @ Vr, F
Color
Shielding
Voltage - Load
Orientation
Current - Peak Output (Source, Sink)
Current - Reverse Leakage @ Vr
Shell Material
Rise / Fall Time (Typ)
Reverse Recovery Time (trr)
Ingress Protection
Output Type
Current Drain (Id) - Max
Output Configuration
Shell Finish
Shell Size - Insert
Voltage - Output
Connector Type
Features
Noise Figure
Voltage - Supply (Vcc/Vdd)
Voltage - Input
Primary Material
Contact Finish - Mating
Speed
Number of Positions
Applications
Ratio - Input
Switch Type
Number of Drivers
Termination
Fastening Type
Rds On (Typ)
Mounting Feature
Fault Protection
Voltage - Forward (Vf) (Max) @ If
Interface
Results remaining44,485
Select
ImageProduct DetailPriceAvailabilityECAD ModelSeriesMounting TypeFET TypeDrain to Source Voltage (Vdss)Operating TemperatureTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackagePackage / CaseQualificationGrade
NVMFS5832NLT3G
MOSFET N-CH 40V 21A 5DFN
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
820,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
21A (Ta)
4.2mOhm @ 20A, 10V
2.4V @ 250µA
4.5V, 10V
51 nC @ 10 V
±20V
2700 pF @ 25 V
3.7W (Ta), 127W (Tc)
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
AEC-Q101
Automotive
FDP085N10A
MOSFET N-CH 100V 96A TO220-3
1+
$2.1549
5+
$2.0352
10+
$1.9155
Quantity
800,001 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
PowerTrench®
Through Hole
N-Channel
100 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
96A (Tc)
8.5mOhm @ 96A, 10V
4V @ 250µA
10V
40 nC @ 10 V
±20V
2695 pF @ 50 V
188W (Tc)
TO-220-3
TO-220-3
-
-
SI2305CDS-T1-GE3
MOSFET P-CH 8V 5.8A SOT23-3
1+
$0.1648
5+
$0.1556
10+
$0.1465
Quantity
718,090 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
TrenchFET®
Surface Mount
P-Channel
8 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
5.8A (Tc)
35mOhm @ 4.4A, 4.5V
1V @ 250µA
1.8V, 4.5V
30 nC @ 8 V
±8V
960 pF @ 4 V
960mW (Ta), 1.7W (Tc)
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
-
-
2N7002KT1G
MOSFET N-CH 60V 320MA SOT23-3
1+
$0.0228
5+
$0.0215
10+
$0.0203
Quantity
710,990 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
N-Channel
60 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
320mA (Ta)
1.6Ohm @ 500mA, 10V
2.3V @ 250µA
4.5V, 10V
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
300mW (Ta)
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
-
-
IRLML2402TRPBF
MOSFET N-CH 20V 1.2A SOT23
1+
$0.0659
5+
$0.0623
10+
$0.0586
Quantity
691,859 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
HEXFET®
Surface Mount
N-Channel
20 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
1.2A (Ta)
250mOhm @ 930mA, 4.5V
700mV @ 250µA (Min)
2.7V, 4.5V
3.9 nC @ 4.5 V
±12V
110 pF @ 15 V
540mW (Ta)
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
-
-
SI3401A-TP
1+
$0.0254
5+
$0.0239
10+
$0.0225
Quantity
660,209 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
P-Channel
30 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
4.2A (Tj)
60mOhm @ 4.2A, 10V
1.3V @ 250µA
2.5V, 10V
-
±12V
1050 pF @ 15 V
400mW
SOT-23
TO-236-3, SC-59, SOT-23-3
-
-
2N7002WT1G
MOSFET N-CH 60V 310MA SC70-3
1+
$0.0254
5+
$0.0239
10+
$0.0225
Quantity
641,258 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
N-Channel
60 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
310mA (Ta)
1.6Ohm @ 500mA, 10V
2.5V @ 250µA
4.5V, 10V
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
280mW (Tj)
SC-70-3 (SOT323)
SC-70, SOT-323
-
-
CSD23280F3
MOSFET P-CH 12V 1.8A 3PICOSTAR
1+
$0.0507
5+
$0.0479
10+
$0.0451
Quantity
636,880 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
FemtoFET™
Surface Mount
P-Channel
12 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
1.8A (Ta)
116mOhm @ 400mA, 4.5V
950mV @ 250µA
1.5V, 4.5V
1.23 nC @ 4.5 V
-6V
234 pF @ 6 V
500mW (Ta)
3-PICOSTAR
3-XFDFN
-
-
BSS138W-7-F
MOSFET N-CH 50V 200MA SOT323
1+
$0.0254
5+
$0.0239
10+
$0.0225
Quantity
629,426 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
N-Channel
50 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
200mA (Ta)
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
10V
-
±20V
50 pF @ 10 V
200mW (Ta)
SOT-323
SC-70, SOT-323
-
-
IRLML2246TRPBF
MOSFET P-CH 20V 2.6A SOT23
1+
$0.0761
5+
$0.0718
10+
$0.0676
Quantity
623,339 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
HEXFET®
Surface Mount
P-Channel
20 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
2.6A (Ta)
135mOhm @ 2.6A, 4.5V
1.1V @ 10µA
2.5V, 4.5V
2.9 nC @ 4.5 V
±12V
220 pF @ 16 V
1.3W (Ta)
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
-
-
SI2306-TP
1+
$0.0634
5+
$0.0599
10+
$0.0563
Quantity
615,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
N-Channel
30 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
3.16A (Ta)
65mOhm @ 2.5A, 4.5V
3V @ 250µA
10V
4.5 nC @ 5 V
±20V
305 pF @ 15 V
750mW
SOT-23
TO-236-3, SC-59, SOT-23-3
-
-
IRFR1205TRPBF
MOSFET N-CH 55V 44A DPAK
1+
$0.5577
5+
$0.5268
10+
$0.4958
Quantity
603,700 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
HEXFET®
Surface Mount
N-Channel
55 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
44A (Tc)
27mOhm @ 26A, 10V
4V @ 250µA
10V
65 nC @ 10 V
±20V
1300 pF @ 25 V
107W (Tc)
TO-252AA (DPAK)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
-
IRFR1205TRPBF
IRFR1205 - 12V-300V N-CHANNEL PO
1+
$0.5577
5+
$0.5268
10+
$0.4958
Quantity
603,700 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
55 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
44A (Tc)
27mOhm @ 26A, 10V
4V @ 250µA
10V
65 nC @ 10 V
±20V
1300 pF @ 25 V
107W (Tc)
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
DMG1013UW-7
MOSFET P-CH 20V 820MA SOT323
1+
$0.0426
5+
$0.0402
10+
$0.0379
Quantity
602,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
P-Channel
20 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
820mA (Ta)
750mOhm @ 430mA, 4.5V
1V @ 250µA
1.8V, 4.5V
0.622 nC @ 4.5 V
±6V
59.76 pF @ 16 V
310mW (Ta)
SOT-323
SC-70, SOT-323
-
-
2N7002
SOT-23 N 60V 0.34A Transistors
1+
$0.0203
5+
$0.0192
10+
$0.0180
Quantity
600,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
N-Channel
60 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
115mA (Ta)
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
5V, 10V
-
±20V
50 pF @ 25 V
200mW (Ta)
SOT-23-3
TO-236-3, SC-59, SOT-23-3
-
-
2N7002E-T1-GE3
MOSFET N-CH 60V 240MA TO236
1+
$0.0634
5+
$0.0599
10+
$0.0563
Quantity
597,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
N-Channel
60 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
240mA (Ta)
3Ohm @ 250mA, 10V
2.5V @ 250µA
10V
0.6 nC @ 4.5 V
±20V
21 pF @ 5 V
350mW (Ta)
TO-236
TO-236-3, SC-59, SOT-23-3
-
-
TP0610K-T1-GE3
MOSFET P-CH 60V 185MA SOT23-3
1+
$0.0368
5+
$0.0347
10+
$0.0327
Quantity
555,555 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
TrenchFET®
Surface Mount
P-Channel
60 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
185mA (Ta)
6Ohm @ 500mA, 10V
3V @ 250µA
4.5V, 10V
1.7 nC @ 15 V
±20V
23 pF @ 25 V
350mW (Ta)
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
-
-
SI2307BDS-T1-E3
MOSFET P-CH 30V 2.5A SOT23-3
1+
$0.2028
5+
$0.1915
10+
$0.1803
Quantity
543,899 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
TrenchFET®
Surface Mount
P-Channel
30 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
2.5A (Ta)
78mOhm @ 3.2A, 10V
3V @ 250µA
4.5V, 10V
15 nC @ 10 V
±20V
380 pF @ 15 V
750mW (Ta)
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
-
-
NTZS3151PT1G
MOSFET P-CH 20V 860MA SOT563
1+
$0.1014
5+
$0.0958
10+
$0.0901
Quantity
532,800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
P-Channel
20 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
860mA (Ta)
150mOhm @ 950mA, 4.5V
1V @ 250µA
1.8V, 4.5V
5.6 nC @ 4.5 V
±8V
458 pF @ 16 V
170mW (Ta)
SOT-563
SOT-563, SOT-666
-
-
NTS4001NT1G
MOSFET N-CH 30V 270MA SC70-3
1+
$0.0634
5+
$0.0599
10+
$0.0563
Quantity
523,366 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
N-Channel
30 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
270mA (Ta)
1.5Ohm @ 10mA, 4V
1.5V @ 100µA
2.5V, 4V
1.3 nC @ 5 V
±20V
33 pF @ 5 V
330mW (Ta)
SC-70-3 (SOT323)
SC-70, SOT-323
-
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.