Single FETs, MOSFETs

Results:
44,485
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Drain to Source Voltage (Vdss)
Operating Temperature
Qualification
Power - Max
FET Feature
Technology
Configuration
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Voltage - Cutoff (VGS off) @ Id
Frequency - Transition
Current - Collector (Ic) (Max)
Grade
Current - Drain (Idss) @ Vds (Vgs=0)
FET Type
Current Rating (Amps)
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Voltage - Rated
Transistor Type
Current - Test
Gain
Power - Output
Input Type
Number of Outputs
Voltage - Test
Frequency
Voltage - Breakdown (V(BR)GSS)
Cable Opening
Voltage Rating
Shell Size, MIL
Resistance - RDS(On)
Gate Type
Material Flammability Rating
Current - Output (Max)
Voltage - Supply
Channel Type
High Side Voltage - Max (Bootstrap)
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Operating Temperature - Junction
Logic Voltage - VIL, VIH
Driven Configuration
Capacitance @ Vr, F
Color
Shielding
Voltage - Load
Orientation
Current - Peak Output (Source, Sink)
Current - Reverse Leakage @ Vr
Shell Material
Rise / Fall Time (Typ)
Reverse Recovery Time (trr)
Ingress Protection
Output Type
Current Drain (Id) - Max
Output Configuration
Shell Finish
Shell Size - Insert
Voltage - Output
Connector Type
Features
Noise Figure
Voltage - Supply (Vcc/Vdd)
Voltage - Input
Primary Material
Contact Finish - Mating
Speed
Number of Positions
Applications
Ratio - Input
Switch Type
Number of Drivers
Termination
Fastening Type
Rds On (Typ)
Mounting Feature
Fault Protection
Voltage - Forward (Vf) (Max) @ If
Interface
Results remaining44,485
Select
ImageProduct DetailPriceAvailabilityECAD ModelSeriesMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
DMP3098L-7
MOSFET P-CH 30V 3.8A SOT23-3
1+
$0.0507
5+
$0.0479
10+
$0.0451
Quantity
519,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
P-Channel
30 V
-
MOSFET (Metal Oxide)
-
3.8A (Ta)
2.1V @ 250µA
-
4.5V, 10V
70mOhm @ 3.8A, 10V
±20V
336 pF @ 25 V
1.08W (Ta)
-
SI2308BDS-T1-GE3
MOSFET N-CH 60V 2.3A SOT23-3
1+
$0.1825
5+
$0.1724
10+
$0.1623
Quantity
513,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
TrenchFET®
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
N-Channel
60 V
-
MOSFET (Metal Oxide)
-
2.3A (Tc)
3V @ 250µA
6.8 nC @ 10 V
4.5V, 10V
156mOhm @ 1.9A, 10V
±20V
190 pF @ 30 V
1.09W (Ta), 1.66W (Tc)
-
DMP2305U-7
MOSFET P-CH 20V 4.2A SOT23-3
1+
$0.0254
5+
$0.0239
10+
$0.0225
Quantity
510,834 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
P-Channel
20 V
-
MOSFET (Metal Oxide)
-
4.2A (Ta)
900mV @ 250µA
7.6 nC @ 4.5 V
1.8V, 4.5V
60mOhm @ 4.2A, 4.5V
±8V
727 pF @ 20 V
1.4W (Ta)
-
2N7002LT3G
MOSFET N-CH 60V 115MA SOT23-3
1+
$0.0355
5+
$0.0335
10+
$0.0315
Quantity
509,991 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
N-Channel
60 V
-
MOSFET (Metal Oxide)
-
115mA (Tc)
2.5V @ 250µA
-
5V, 10V
7.5Ohm @ 500mA, 10V
±20V
50 pF @ 25 V
225mW (Ta)
-
FDN360P
MOSFET P-CH 30V 2A SUPERSOT3
1+
$0.1268
5+
$0.1197
10+
$0.1127
Quantity
507,618 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
PowerTrench®
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
P-Channel
30 V
-
MOSFET (Metal Oxide)
-
2A (Ta)
3V @ 250µA
9 nC @ 10 V
4.5V, 10V
80mOhm @ 2A, 10V
±20V
298 pF @ 15 V
500mW (Ta)
-
FDN360P
SMALL SIGNAL FIELD-EFFECT TRANSI
1+
$0.1268
5+
$0.1197
10+
$0.1127
Quantity
507,618 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
P-Channel
30 V
MOSFET (Metal Oxide)
-
2A (Ta)
3V @ 250µA
9 nC @ 10 V
4.5V, 10V
80mOhm @ 2A, 10V
±20V
298 pF @ 15 V
500mW (Ta)
BSS123-TP
MOSFET N-CH 100V 170MA SOT23
1+
$0.1394
5+
$0.1317
10+
$0.1239
Quantity
501,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23
N-Channel
100 V
-
MOSFET (Metal Oxide)
-
170mA Tj)
2.8V @ 250µA
2 nC @ 10 V
4.5V, 10V
6Ohm @ 170mA, 10V
±20V
60 pF @ 25 V
350mW
-
SI8425DB-T1-E1
MOSFET P-CH 20V 4WLCSP
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
500,335 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
TrenchFET®
Surface Mount
-55°C ~ 150°C (TJ)
4-UFBGA, WLCSP
4-WLCSP (1.6x1.6)
P-Channel
20 V
-
MOSFET (Metal Oxide)
-
5.9A (Ta)
900mV @ 250µA
110 nC @ 10 V
1.8V, 4.5V
23mOhm @ 2A, 4.5V
±10V
2800 pF @ 10 V
1.1W (Ta), 2.7W (Tc)
-
SI1012R-T1-GE3
MOSFET N-CH 20V 500MA SC75A
1+
$0.1141
5+
$0.1077
10+
$0.1014
Quantity
483,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
TrenchFET®
Surface Mount
-55°C ~ 150°C (TJ)
SC-75, SOT-416
SC-75A
N-Channel
20 V
-
MOSFET (Metal Oxide)
-
500mA (Ta)
900mV @ 250µA
0.75 nC @ 4.5 V
1.8V, 4.5V
700mOhm @ 600mA, 4.5V
±6V
-
150mW (Ta)
-
NTA7002NT1G
MOSFET N-CH 30V 154MA SC75
1+
$0.0304
5+
$0.0287
10+
$0.0270
Quantity
476,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
SC-75, SOT-416
SC-75, SOT-416
N-Channel
30 V
-
MOSFET (Metal Oxide)
-
154mA (Tj)
1.5V @ 100µA
-
2.5V, 4.5V
7Ohm @ 154mA, 4.5V
±10V
20 pF @ 5 V
300mW (Tj)
-
DMN63D8LW-7
MOSFET N-CH 30V 380MA SOT323
1+
$0.0304
5+
$0.0287
10+
$0.0270
Quantity
447,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
SC-70, SOT-323
SOT-323
N-Channel
30 V
-
MOSFET (Metal Oxide)
-
380mA (Ta)
1.5V @ 250µA
0.9 nC @ 10 V
2.5V, 10V
2.8Ohm @ 250mA, 10V
±20V
23.2 pF @ 25 V
300mW (Ta)
-
BSS84W-7-F
MOSFET P-CH 50V 130MA SOT323
1+
$0.0330
5+
$0.0311
10+
$0.0293
Quantity
443,304 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
SC-70, SOT-323
SOT-323
P-Channel
50 V
-
MOSFET (Metal Oxide)
-
130mA (Ta)
2V @ 1mA
-
5V
10Ohm @ 100mA, 5V
±20V
45 pF @ 25 V
200mW (Ta)
-
DMP2165UW-7
MOSFET P-CH 20V 2.5A SOT323 T&R
1+
$0.0380
5+
$0.0359
10+
$0.0338
Quantity
436,446 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
SC-70, SOT-323
SOT-323
P-Channel
20 V
-
MOSFET (Metal Oxide)
-
2.5A (Ta)
1V @ 250µA
3.5 nC @ 4.5 V
1.8V, 4.5V
90mOhm @ 1.5A, 4.5V
±12V
335 pF @ 15 V
500mW (Ta)
-
AUIRFR4104TRL
AUTOMOTIVE HEXFET N CHANNEL
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
434,328 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
HEXFET®
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
N-Channel
40 V
-
MOSFET (Metal Oxide)
-
42A (Tc)
4V @ 250µA
89 nC @ 10 V
-
5.5mOhm @ 42A, 10V
-
2950 pF @ 25 V
140W (Tc)
-
AUIRFR4104TRL
MOSFET N-CH 40V 42A DPAK
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
434,328 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
HEXFET®
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA (DPAK)
N-Channel
40 V
-
MOSFET (Metal Oxide)
-
42A (Tc)
4V @ 250µA
89 nC @ 10 V
-
5.5mOhm @ 42A, 10V
-
2950 pF @ 25 V
140W (Tc)
-
TSM085P03CV RGG
MOSFET P-CH 30V 64A 8PDFN
1+
$1.7746
5+
$1.6761
10+
$1.5775
Quantity
425,533 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerWDFN
8-PDFN (3.1x3.1)
P-Channel
30 V
-
MOSFET (Metal Oxide)
-
64A (Tc)
2.5V @ 250µA
55 nC @ 10 V
4.5V, 10V
8.5mOhm @ 14A, 10V
±20V
3234 pF @ 15 V
50W (Tc)
-
CSD15380F3
MOSFET N-CH 20V 500MA 3PICOSTAR
1+
$0.0761
5+
$0.0718
10+
$0.0676
Quantity
421,079 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
FemtoFET™
Surface Mount
-55°C ~ 150°C (TJ)
3-XFDFN
3-PICOSTAR
N-Channel
20 V
-
MOSFET (Metal Oxide)
-
500mA (Ta)
1.35V @ 2.5µA
0.281 nC @ 10 V
2.8V, 8V
1190mOhm @ 100mA, 8V
10V
10.5 pF @ 10 V
500mW (Ta)
-
RK7002BMT116
MOSFET N-CH 60V 250MA SST3
1+
$0.0190
5+
$0.0180
10+
$0.0169
Quantity
420,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SST3
N-Channel
60 V
-
MOSFET (Metal Oxide)
-
250mA (Ta)
2.3V @ 1mA
-
2.5V, 10V
2.4Ohm @ 250mA, 10V
±20V
15 pF @ 25 V
200mW (Ta)
-
DMG2305UX-7
MOSFET P-CH 20V 4.2A SOT23
1+
$0.0254
5+
$0.0239
10+
$0.0225
Quantity
416,850 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
P-Channel
20 V
-
MOSFET (Metal Oxide)
-
4.2A (Ta)
900mV @ 250µA
10.2 nC @ 4.5 V
1.8V, 4.5V
52mOhm @ 4.2A, 4.5V
±8V
808 pF @ 15 V
1.4W (Ta)
-
NDS7002A
MOSFET N-CH 60V 280MA SOT-23
1+
$0.0963
5+
$0.0910
10+
$0.0856
Quantity
415,875 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-65°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
N-Channel
60 V
-
MOSFET (Metal Oxide)
-
280mA (Ta)
2.5V @ 250µA
-
5V, 10V
2Ohm @ 500mA, 10V
±20V
50 pF @ 25 V
300mW (Ta)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.