Single FETs, MOSFETs

Results:
44,485
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Drain to Source Voltage (Vdss)
Operating Temperature
Qualification
Power - Max
FET Feature
Technology
Configuration
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Voltage - Cutoff (VGS off) @ Id
Frequency - Transition
Current - Collector (Ic) (Max)
Grade
Current - Drain (Idss) @ Vds (Vgs=0)
FET Type
Current Rating (Amps)
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Voltage - Rated
Transistor Type
Current - Test
Gain
Power - Output
Input Type
Number of Outputs
Voltage - Test
Frequency
Voltage - Breakdown (V(BR)GSS)
Cable Opening
Voltage Rating
Shell Size, MIL
Resistance - RDS(On)
Gate Type
Material Flammability Rating
Current - Output (Max)
Voltage - Supply
Channel Type
High Side Voltage - Max (Bootstrap)
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Operating Temperature - Junction
Logic Voltage - VIL, VIH
Driven Configuration
Capacitance @ Vr, F
Color
Shielding
Voltage - Load
Orientation
Current - Peak Output (Source, Sink)
Current - Reverse Leakage @ Vr
Shell Material
Rise / Fall Time (Typ)
Reverse Recovery Time (trr)
Ingress Protection
Output Type
Current Drain (Id) - Max
Output Configuration
Shell Finish
Shell Size - Insert
Voltage - Output
Connector Type
Features
Noise Figure
Voltage - Supply (Vcc/Vdd)
Voltage - Input
Primary Material
Contact Finish - Mating
Speed
Number of Positions
Applications
Ratio - Input
Switch Type
Number of Drivers
Termination
Fastening Type
Rds On (Typ)
Mounting Feature
Fault Protection
Voltage - Forward (Vf) (Max) @ If
Interface
Results remaining44,485
Select
ImageProduct DetailPriceAvailabilityECAD ModelSeriesMounting TypeOperating TemperaturePackage / CaseFET TypeSupplier Device PackageGradeTechnologyFET FeatureVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
ZXMP10A17E6QTA
MOSFET P-CH 100V 1.3A SOT26
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
345,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-6
P-Channel
SOT-26
-
MOSFET (Metal Oxide)
-
4V @ 250µA
100 V
1.3A (Ta)
6V, 10V
350mOhm @ 1.4A, 10V
10.7 nC @ 10 V
±20V
424 pF @ 50 V
1.1W (Ta)
-
DMN32D2LFB4-7
MOSFET N-CH 30V 300MA 3DFN
1+
$0.0456
5+
$0.0431
10+
$0.0406
Quantity
343,726 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
3-XFDFN
N-Channel
X2-DFN1006-3
-
MOSFET (Metal Oxide)
-
1.2V @ 250µA
30 V
300mA (Ta)
1.8V, 4V
1.2Ohm @ 100mA, 4V
-
±10V
39 pF @ 3 V
350mW (Ta)
-
2N7002ET1G
MOSFET N-CH 60V 260MA SOT23-3
1+
$0.0254
5+
$0.0239
10+
$0.0225
Quantity
342,535 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
SOT-23-3 (TO-236)
-
MOSFET (Metal Oxide)
-
2.5V @ 250µA
60 V
260mA (Ta)
4.5V, 10V
2.5Ohm @ 240mA, 10V
0.81 nC @ 5 V
±20V
26.7 pF @ 25 V
300mW (Tj)
-
DMN26D0UT-7
MOSFET N-CH 20V 230MA SOT523
1+
$0.0279
5+
$0.0263
10+
$0.0248
Quantity
341,969 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
SOT-523
N-Channel
SOT-523
-
MOSFET (Metal Oxide)
-
1V @ 250µA
20 V
230mA (Ta)
1.2V, 4.5V
3Ohm @ 100mA, 4.5V
-
±10V
14.1 pF @ 15 V
300mW (Ta)
-
DMG2302U-7
MOSFET N-CH 20V 4.2A SOT23-3
1+
$0.0373
5+
$0.0352
10+
$0.0331
Quantity
341,674 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
SOT-23-3
-
MOSFET (Metal Oxide)
-
1V @ 50µA
20 V
4.2A (Ta)
2.5V, 4.5V
90mOhm @ 3.6A, 4.5V
7 nC @ 4.5 V
±8V
594.3 pF @ 10 V
800mW (Ta)
-
AO3403
MOSFET P-CH 30V 2.6A SOT23-3L
1+
$0.0456
5+
$0.0431
10+
$0.0406
Quantity
337,741 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
3-SMD, SOT-23-3 Variant
P-Channel
SOT-23-3
-
MOSFET (Metal Oxide)
-
1.4V @ 250µA
30 V
2.6A (Ta)
2.5V, 10V
115mOhm @ 2.6A, 10V
7.2 nC @ 10 V
±12V
315 pF @ 15 V
1.4W (Ta)
-
DMN62D1LFD-13
MOSFET N-CH 60V 400MA 3DFN
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
336,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
3-UDFN
N-Channel
X1-DFN1212-3
-
MOSFET (Metal Oxide)
-
1V @ 250µA
60 V
400mA (Ta)
1.8V, 4V
2Ohm @ 100mA, 4V
0.55 nC @ 4.5 V
±20V
36 pF @ 25 V
500mW (Ta)
-
NVMFS5C442NAFT1G
MOSFET N-CH 40V 29A/140A 5DFN
1+
$4.0563
5+
$3.8310
10+
$3.6056
Quantity
331,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 175°C (TJ)
8-PowerTDFN, 5 Leads
N-Channel
5-DFN (5x6) (8-SOFL)
Automotive
MOSFET (Metal Oxide)
-
4V @ 250µA
40 V
29A (Ta), 140A (Tc)
10V
2.3mOhm @ 50A, 10V
32 nC @ 10 V
±20V
2100 pF @ 25 V
3.7W (Ta), 83W (Tc)
AEC-Q101
FDMC86102L
MOSFET N-CH 100V 7A/18A 8MLP
1+
$0.8620
5+
$0.8141
10+
$0.7662
Quantity
330,001 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
PowerTrench®
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerWDFN
N-Channel
8-MLP (3.3x3.3)
-
MOSFET (Metal Oxide)
-
3V @ 250µA
100 V
7A (Ta), 18A (Tc)
4.5V, 10V
23mOhm @ 7A, 10V
22 nC @ 10 V
±20V
1330 pF @ 50 V
2.3W (Ta), 41W (Tc)
-
2N7002K
MOSFET N-CH 60V 320MA SOT23
1+
$0.0380
5+
$0.0359
10+
$0.0338
Quantity
326,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
SOT-23-3 (TO-236)
-
MOSFET (Metal Oxide)
-
2.3V @ 250µA
60 V
320mA (Ta)
4.5V, 10V
1.6Ohm @ 500mA, 10V
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
300mW (Ta)
-
2N7002AQ-7
MOSFET N-CH 60V 180MA SOT23
1+
$0.0393
5+
$0.0371
10+
$0.0349
Quantity
324,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
SOT-23-3
Automotive
MOSFET (Metal Oxide)
-
2V @ 250µA
60 V
180mA (Ta)
5V
5Ohm @ 115mA, 10V
-
±20V
23 pF @ 25 V
370mW (Ta)
AEC-Q101
RU1C001UNTCL
MOSFET N-CH 20V 100MA UMT3F
1+
$0.0177
5+
$0.0168
10+
$0.0158
Quantity
323,151 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
150°C (TJ)
SC-85
N-Channel
UMT3F
-
MOSFET (Metal Oxide)
-
1V @ 100µA
20 V
100mA (Ta)
1.2V, 4.5V
3.5Ohm @ 100mA, 4.5V
-
±12V
7.1 pF @ 10 V
150mW (Ta)
-
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
1+
$0.0634
5+
$0.0599
10+
$0.0563
Quantity
322,505 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
SIPMOS®
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
PG-SOT23
-
MOSFET (Metal Oxide)
-
1.4V @ 26µA
60 V
230mA (Ta)
4.5V, 10V
3.5Ohm @ 230mA, 10V
1.4 nC @ 10 V
±20V
41 pF @ 25 V
360mW (Ta)
-
NVC3S5A51PLZT1G
MOSFET P-CH 60V 1.8A 3CPH
1+
$5.5775
5+
$5.2676
10+
$4.9577
Quantity
321,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 175°C (TJ)
TO-236-3, SC-59, SOT-23-3
P-Channel
3-CPH
Automotive
MOSFET (Metal Oxide)
-
2.6V @ 1mA
60 V
1.8A (Ta)
4V, 10V
250mOhm @ 1A, 10V
6 nC @ 10 V
±20V
262 pF @ 20 V
1.2W (Ta)
AEC-Q101
DMN26D0UFB4-7B
1+
$0.0887
5+
$0.0838
10+
$0.0789
Quantity
320,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
3-XFDFN
N-Channel
X2-DFN1006-3
-
MOSFET (Metal Oxide)
-
900mV @ 250µA
20 V
240mA (Ta)
1.5V, 4.5V
3Ohm @ 100mA, 4.5V
-
±10V
14.1 pF @ 15 V
350mW (Ta)
-
CSD17483F4
MOSFET N-CH 30V 1.5A 3PICOSTAR
1+
$0.0558
5+
$0.0527
10+
$0.0496
Quantity
317,876 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
NexFET™
Surface Mount
-55°C ~ 150°C (TJ)
3-XFDFN
N-Channel
3-PICOSTAR
-
MOSFET (Metal Oxide)
-
1.1V @ 250µA
30 V
1.5A (Ta)
1.8V, 4.5V
240mOhm @ 500mA, 8V
1.3 nC @ 4.5 V
12V
190 pF @ 15 V
500mW (Ta)
-
DMN2075U-7
MOSFET N-CH 20V 4.2A SOT23-3
1+
$0.0380
5+
$0.0359
10+
$0.0338
Quantity
317,811 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
SOT-23-3
-
MOSFET (Metal Oxide)
-
1V @ 250µA
20 V
4.2A (Ta)
2.5V, 4.5V
38mOhm @ 3.6A, 4.5V
7 nC @ 4.5 V
±8V
594.3 pF @ 10 V
800mW (Ta)
-
2N7002-7-F
MOSFET N-CH 60V 115MA SOT23-3
1+
$0.0127
5+
$0.0120
10+
$0.0113
Quantity
312,268 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
SOT-23-3
-
MOSFET (Metal Oxide)
-
2.5V @ 250µA
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 50mA, 5V
-
±20V
50 pF @ 25 V
370mW (Ta)
-
BSS123-7-F
MOSFET N-CH 100V 170MA SOT23-3
1+
$0.0208
5+
$0.0196
10+
$0.0185
Quantity
311,049 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
SOT-23-3
-
MOSFET (Metal Oxide)
-
2V @ 1mA
100 V
170mA (Ta)
10V
6Ohm @ 170mA, 10V
-
±20V
60 pF @ 25 V
300mW (Ta)
-
DMN3730UFB4-7B
MOSFET N-CH 30V 750MA 3DFN
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
310,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Automotive, AEC-Q101
Surface Mount
-55°C ~ 150°C (TJ)
3-XFDFN
N-Channel
X2-DFN1006-3
-
MOSFET (Metal Oxide)
-
950mV @ 250µA
30 V
750mA (Ta)
1.8V, 4.5V
460mOhm @ 200mA, 4.5V
1.6 nC @ 4.5 V
±8V
64.3 pF @ 25 V
470mW (Ta)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.