IGBT Arrays

Results:
19
Manufacturer
Series
Current - Collector (Ic) (Max)
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Power - Max
Voltage - Collector Emitter Breakdown (Max)
Package / Case
Supplier Device Package
Configuration
Mounting Type
IGBT Type
Operating Temperature
NTC Thermistor
Input
Results remaining19
Select
ImageProduct DetailPriceAvailabilityECAD ModelSeriesMounting TypeOperating TemperatureIGBT TypeConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power - MaxVce(on) (Max) @ Vge, IcInputNTC ThermistorPackage / CaseSupplier Device PackageCurrent - Collector Cutoff (Max)Input Capacitance (Cies) @ Vce
MMIX4B20N300
IGBT F BRIDGE 3000V 34A 24SMPD
1+
$300.0000
5+
$283.3333
10+
$266.6667
Quantity
300 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Surface Mount
-55°C ~ 150°C (TJ)
-
Full Bridge
3000 V
34 A
150 W
3.2V @ 15V, 20A
Standard
No
24-SMD Module, 9 Leads
24-SMPD
-
-
MMIX4B22N300
IGBT TRANS 3000V 38A
1+
$100.0000
5+
$94.4444
10+
$88.8889
Quantity
2,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
BIMOSFET™
Surface Mount
-55°C ~ 150°C (TJ)
-
Full Bridge
3000 V
38 A
150 W
2.7V @ 15V, 22A
Standard
No
24-SMD Module, 9 Leads
24-SMPD
35 µA
2.2 nF @ 25 V
MMIX4G20N250
IGBT H BRIDGE 2500V 23A 24SMPD
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
-
Full Bridge
2500 V
23 A
100 W
3.1V @ 15V, 20A
Standard
No
24-SMD Module, 9 Leads
24-SMPD
10 µA
1.19 nF @ 15 V
IXA20PG1200DHG-TRR
IGBT H BRIDGE 1200V 32A SMPD
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
PT
Half Bridge
1200 V
32 A
130 W
2.1V @ 15V, 15A
Standard
No
9-SMD Module
ISOPLUS-SMPD™.B
125 µA
-
IXA30PG1200DHG-TRR
IGBT H BRIDGE 1200V 43A SMPD
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
PT
Half Bridge
1200 V
43 A
150 W
2.2V @ 15V, 25A
Standard
No
9-SMD Module
ISOPLUS-SMPD™.B
2.1 mA
-
IXA40RG1200DHG-TUB
IGBT H BRIDGE 1200V 63A SMPD
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Quantity
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PCB Symbol, Footprint & 3D Model
ISOPLUS™
Surface Mount
-55°C ~ 150°C (TJ)
PT
Half Bridge
1200 V
63 A
230 W
2.15V @ 15V, 35A
Standard
No
9-SMD Module
ISOPLUS-SMPD™.B
150 µA
-
IXA20PG1200DHG-TUB
IGBT H BRIDGE 1200V 32A SMPD
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
PT
Half Bridge
1200 V
32 A
130 W
2.1V @ 15V, 15A
Standard
No
9-SMD Module
ISOPLUS-SMPD™.B
125 µA
-
IXA40RG1200DHG-TRR
IGBT H BRIDGE 1200V 63A SMPD
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Quantity
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PCB Symbol, Footprint & 3D Model
ISOPLUS™
Surface Mount
-55°C ~ 150°C (TJ)
PT
Half Bridge
1200 V
63 A
230 W
2.15V @ 15V, 35A
Standard
No
9-SMD Module
ISOPLUS-SMPD™.B
150 µA
-
IXA40PG1200DHG-TUB
IGBT H BRIDGE 1200V 63A SMPD
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
PT
Half Bridge
1200 V
63 A
230 W
2.15V @ 15V, 35A
Standard
No
9-SMD Module
ISOPLUS-SMPD™.B
150 µA
-
IXA30PG1200DHG-TUB
IGBT H BRIDGE 1200V 43A SMPD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
PT
Half Bridge
1200 V
43 A
150 W
2.2V @ 15V, 25A
Standard
No
9-SMD Module
ISOPLUS-SMPD™.B
2.1 mA
-
IXA40PG1200DHG-TRR
IGBT H BRIDGE 1200V 63A SMPD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
PT
Half Bridge
1200 V
63 A
230 W
2.15V @ 15V, 35A
Standard
No
9-SMD Module
ISOPLUS-SMPD™.B
150 µA
-
FII40-06D
IGBT H BRIDGE 600V 40A I4PAK5
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-55°C ~ 150°C (TJ)
NPT
Half Bridge
600 V
40 A
125 W
2.2V @ 15V, 25A
Standard
No
i4-Pac™-5
ISOPLUS i4-PAC™
600 µA
1.6 nF @ 25 V
FII24N17AH1S
IGBT H BRIDGE 1700V 18A I4PAK5
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-
NPT
Half Bridge
1700 V
18 A
140 W
6V @ 15V, 16A
Standard
No
i4-Pac™-5
ISOPLUS i4-PAC™
100 µA
2.4 nF @ 25 V
FII24N17AH1
IGBT H BRIDGE 1700V 18A I4PAK5
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-55°C ~ 150°C (TJ)
NPT
Half Bridge
1700 V
18 A
140 W
6V @ 15V, 16A
Standard
No
i4-Pac™-5
ISOPLUS i4-PAC™
100 µA
2.4 nF @ 25 V
FII30-06D
IGBT H BRIDGE 600V 30A I4PAK5
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-55°C ~ 150°C (TJ)
NPT
Half Bridge
600 V
30 A
100 W
2.4V @ 15V, 20A
Standard
No
i4-Pac™-5
ISOPLUS i4-PAC™
600 µA
1.1 nF @ 25 V
FII30-12E
IGBT H BRIDGE 1200V 33A I4PAK5
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-55°C ~ 150°C (TJ)
NPT
Half Bridge
1200 V
33 A
150 W
2.9V @ 15V, 20A
Standard
No
i4-Pac™-5
ISOPLUS i4-PAC™
200 µA
1.2 nF @ 25 V
FII50-12E
IGBT H BRIDGE 1200V 50A I4PAK5
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-55°C ~ 150°C (TJ)
NPT
Half Bridge
1200 V
50 A
200 W
2.6V @ 15V, 30A
Standard
No
i4-Pac™-5
ISOPLUS i4-PAC™
400 µA
2 nF @ 25 V
FII24N170AH1
IGBT H BRIDGE 1700V 18A I4PAK5
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-55°C ~ 150°C (TJ)
NPT
Half Bridge
1700 V
18 A
140 W
6V @ 15V, 16A
Standard
No
i4-Pac™-4, Isolated
ISOPLUS i4-PAC™
100 µA
2.4 nF @ 25 V
AOMU66464Q
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-

About  IGBT Arrays

Insulated-Gate Bipolar Transistors (IGBTs) are advanced power semiconductor devices that offer high efficiency and fast switching capabilities. These three-terminal devices are primarily used as electronic switches in a wide range of applications. One of the key advantages of IGBTs is their ability to handle high power levels, making them ideal for use in switching power supplies and high-power applications such as variable-frequency drives (VFDs), electric cars, trains, lamp ballasts, air-conditioners, and industrial control systems. Their ability to handle large currents and voltages enables efficient power conversion and control in these demanding applications. IGBTs are also commonly used in switching amplifiers, which are essential components in sound systems and industrial control systems. The fast switching speed of IGBTs allows for precise control over the amplification process, resulting in high-quality audio output and efficient power utilization. In certain applications, IGBT arrays are employed, which consist of multiple IGBT devices packaged together in either full-bridge or half-bridge configurations. This configuration offers enhanced power handling capabilities and allows for more complex circuit designs. The "insulated-gate" in the name refers to the presence of an insulating layer between the gate electrode and the semiconductor material. This insulation helps to minimize leakage currents and improve the overall performance of the device. Additionally, IGBTs combine the positive attributes of both bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), offering the best features of both technologies. In summary, Insulated-Gate Bipolar Transistors (IGBTs) are high-efficiency and fast-switching power semiconductor devices. They find extensive use in various applications, including switching power supplies, VFDs, electric vehicles, industrial control systems, and sound systems. IGBT arrays provide enhanced power handling capabilities, while the insulated-gate design ensures optimal performance and efficiency.